2000
DOI: 10.1016/s0168-583x(99)00830-7
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Nuclear reaction analysis of hydrogen migration in silicon dioxide films on silicon under 15N ion irradiation

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Cited by 11 publications
(4 citation statements)
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“…Currently, we have no information about H + profiles and internal electric fields on μm length scales under the anode. H + profiles cannot be obtained by means of EDX, but 15 N nuclear reaction profiling techniques can be used [19].…”
Section: Discussionmentioning
confidence: 99%
“…Currently, we have no information about H + profiles and internal electric fields on μm length scales under the anode. H + profiles cannot be obtained by means of EDX, but 15 N nuclear reaction profiling techniques can be used [19].…”
Section: Discussionmentioning
confidence: 99%
“…Note, however, that the H accumulation in the interfacial regions seen in the depth profiles may partially result from the NRA analysis itself, because the 15 N ion irradiation can cause redistribution of hydrogen in the material. This is a well-known effect 35,[38][39][40] and any possible H relocation during the NRA analysis should be verified by measuring the H concentration evolution at the accumulation peak depth on a non-irradiated sample spot in the course of continued 15 N ion irradiation. Although this beam-induced H relocation effect can make determining the original H distribution in a specimen somewhat more difficult, it can be exploited for analytical purposes in dielectric reliability research to evaluate H redistribution trends between intact interfaces of (model) MOS device structures, providing information on relative material-specific H mobilities.…”
Section: Discussionmentioning
confidence: 94%
“…Whilst this has a strong narrow resonance at 6.385 MeV (laboratory energy), the main problem is to obtain a good 15 N ion beam, because the 15 N abundance in natural N is below 1% and N does not form a stable negative ion as is necessary in tandem accelerators. An application [14] of H depth profi ling is shown in Figure 14.2 , where the gamma yield as a function of projectile energy is shown in Figure 14.2 a. Here, the projectile energy E p = E r + Δ E , where E r is the resonance energy (6.385 MeV) and Δ E is the abscissa.…”
Section: Applicationsmentioning
confidence: 99%