Nuclear Tracks in Solids

Fleischer, R. L.; Price, P. B.; Walker, R. M.

doi:10.1038/scientificamerican0669-30

Cited by 604 publications

(180 citation statements)

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“…SHIs lose most of their energy via electron excitations as they traverse a material until they have slowed down to the low energies where nuclear loss process dominates. It is well-known that a large amount of energy transferred into an electron subsystem of irradiated crystals may result, from a certain threshold value, in the formation of a specific radiation damage the so-called latent tracks [13]. Although not the only source of damage production, dense ionization may affect structure evolution by changing the charge state of defects or annealing due to intense local heating.…”

Section: Introductionmentioning

confidence: 99%

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Hlatshwayo

O’Connell

Skuratov

et al. 2015

J. Phys. D: Appl. Phys.

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The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2×10 16 cm -2 and 1×10 16 cm -2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3×10 14 cm -2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV/nm and 20 keV/nm to fluences below 10 14 cm -2 . Therefore, our results suggest a fluence 2 threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation.Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation.

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Section: Introductionmentioning

confidence: 99%

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Hlatshwayo

O’Connell

Skuratov

et al. 2015

J. Phys. D: Appl. Phys.

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“…Charged regions [2,3] as well as hot electrons [4][5][6] on a nanoscopic scale trigger the subsequent atomic motion and rearrangement inside ion tracks [3,7]. The most important scenarios for track effects with energy-density thresholds are Coulomb explosion [2] due to the mutual repulsion of ionized target atoms, spontaneous lattice relaxation due to long lived repulsive states [4] and the electronic thermal spike due to electron-phonon coupling [5] or individual electron-ion collisions [6]. A critical survey of the electronic thermal-spike and related models may be found in [8].…”

mentioning

confidence: 99%

Search for short-time phase effects in the electronic damage evolution – A case study with silicon

Schiwietz¹,

Czerski²,

Hellhammer³

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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This work focusses on the production and decay properties of inner-shell vacancies and valence-band excitations induced by swift highly charged ions interacting with amorphous and crystalline Si. High resolution electron spectra have been taken for fast heavy ions at 1.78 to 5 MeV/u as well as for electrons of similar velocity incident on atomically clean Si targets of well defined phase. Various Auger-electron structures are analyzed concerning their width, their intensity and exact peak position. All measured peaks show a small shift towards lower energy when the charge of the projectile is increased. This finding is an indication for a nuclear-track potential inside the ion track. A detailed analysis of the Auger-electron spectra for amorphous Si and crystalline Si(111) 7x7 points to a small but significant phase effect in the short-time dynamics of ion tracks.

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“…The concept of "Coulomb explosion" i.e. violent disruption of a local region of the lattice by unbalanced electrostatic forces during the period before electrical neutrality is restored to a region around the ion track has its applicability in materials with reduced electron mobility (Fleischer et al, 1975). The track creation in insulating materials is thus successfully explained by this model.…”

Section: Introductionmentioning

confidence: 65%

Effect of secondary electrons from latent tracks created in YBCO by swift heavy ion irradiation

Behera

Mohanty

Dash

et al. 2003

Radiation Measurements

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Nuclear Tracks in Solids

Cited by 604 publications

References 0 publications

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Search for short-time phase effects in the electronic damage evolution – A case study with silicon

Effect of secondary electrons from latent tracks created in YBCO by swift heavy ion irradiation

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