Nucleation and grain growth of SrBi2Nb2O9 thin films

Yoo, Dong Chul; Lee, Jun Young; Kim, Ik Soo; Kim, Yong Tae

doi:10.1016/j.jcrysgro.2003.07.008

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…The effect of target-to-substrate distance on the morphology of SBT films is consistent with the XRD and XPS results: reduction of Bi sees increase in pyrochlore, which is discernable at morphologies in Figure 4.17: at 50 mm, as Bi starts to dip (c.f. the previous report [108] . Osaka et al also observed the diffraction peak of the fluorite phase in their XRD data when their SBT thin films were heat-treated at 650℃ [109] .…”

Section: Microstructurementioning

confidence: 49%

“…The crystalline fluorite phase was possibly formed when the film was annealed in 100% oxygen atmosphere [110] . This phase has a face-centered cubic structure [108] and As the temperature rises to 700℃, the grains size becomes larger where the grain corresponds to layered perovskite structure. As the temperature further increases, such as 750℃and 800℃, the grain size further enlarge, indicating that the crystallization further improves.…”

Section: Microstructurementioning

confidence: 99%

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Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

Li¹

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Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2E c ), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi 2 Ta 2 O 9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 10 12 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10μC/cm 2 ) and high annealing temperature (>800℃). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi 3+ , La 3+ and Nd 3+ with the Sr 2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization.This project aims to improve the polarization properties through doping, and at the same time to reduce the crystallization temperature of the Aurivillius phase. The Sr-deficient and Nd-doped SBT thin films are deposited via radio frequency magnetron sputtering. The relationship among deposition parameters, microstructure and polarization properties of Sr-deficient SBT thin films are discussed in details so that pure layered perovskite structure without pyrochlore is obtained. Based on this,

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Section: Microstructurementioning

confidence: 49%

Section: Microstructurementioning

confidence: 99%