2005
DOI: 10.1016/j.jcrysgro.2005.02.009
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Nucleation and growth of -Bi2O3 thin films on c-sapphire by means of chemical vapour deposition under atmospheric pressure

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Cited by 15 publications
(9 citation statements)
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“…In the field of Bi 2 O 3 -based electrolytes, ␦-Bi 2 O 3 thin films have recently been produced by CVD [189][190][191]. The authors reported that ␦-Bi 2 O 3 thin films remain stable even down to temperatures of 350 • C. The highly conductive ␦-Bi 2 O 3 changes usually to phases with lower symmetry and low conductivity between 730 • C and 650 • C for microcrystalline Bi 2 O 3 -based ceramics (Fig.…”
Section: Bismuth Oxide-based Electrolytesmentioning
confidence: 99%
“…In the field of Bi 2 O 3 -based electrolytes, ␦-Bi 2 O 3 thin films have recently been produced by CVD [189][190][191]. The authors reported that ␦-Bi 2 O 3 thin films remain stable even down to temperatures of 350 • C. The highly conductive ␦-Bi 2 O 3 changes usually to phases with lower symmetry and low conductivity between 730 • C and 650 • C for microcrystalline Bi 2 O 3 -based ceramics (Fig.…”
Section: Bismuth Oxide-based Electrolytesmentioning
confidence: 99%
“…Recently, δ-Bi 2 O 3 has been synthesized by electrodeposition [19,21,22] and chemical vapor deposition [12,23]. One severe disadvantage of the electrodeposition is that the substrates must be conductive materials, which limits the use of the substrate materials.…”
Section: Introductionmentioning
confidence: 99%
“…At the same time, the latter -Bi 2 O 3 formation exhibited a fast crystal growth and ripening. Such fast growth of Bi 2 O 3 hasbeen widely reported elsewhere[134][135][136][137]. Therefore, the final product after 10 hour reaction has resulted in much larger -Bi 2 O 3 crystals, as indicated inFigure 6.3 (g) and (h).…”
supporting
confidence: 55%