Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR

Enhanced luminescence from Si quantum dots/SiO2 multilayers by hydrogen annealing

“…It has been reported that hydrogen atoms can passivate the defect states to improve the luminescence intensity and stability [17,18]. K. Sato et al reported that the PL intensity of nano-crystalline Si (nc-Si) can be increased more than one order of magnitude by using hydrofluoric acid solution to passivate the non-luminescence states [15].…”

Stability of nanocrystalline silicon particles in solution

“…1. The samples were deposited on a p-type Si (1 0 0) substrate using a radio frequency (RF) sputtering method [2]. The sputtering target used 36 pieces of p-type Si (1 0 0) chips with 5 Â 5 mm placed on a silica (SiO 2 ) with a purity of 99.99% and a 100 mm diameter.…”

Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films

“…When modelling multi-pulse annealing regime, the equation of heat transfer is solved first of all for a onepulse regime using equations (2)(3)(4)(5)(6). After that, the results obtained are taken as initial equations, and equations (2-6) are solved again, this time with new initial conditions.…”

“…Last years, a need is aroused appreciably for elaborating physical foundations for creation of composite materials on silicon base [1,2]. In particular, investigation begins of structures with nanoparticles of silicon brought up inside SiO 2 with attributes that make it possible to use them for creating new generation of opto-, micro-, and nano-electronic equipment facilities (light-emitting diodes, lasers, solar cells, memory elements, and so on).…”