Nucleation and growth of ultrathin Bi films

Hirayama, Hiroyuki

doi:10.1080/23746149.2020.1845975

Cited by 11 publications

(10 citation statements)

References 59 publications

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“…which are often absent in their bulk form [1][2][3][4][5][6][7][8][9][10]. In particular, group V elements (e.g., Bi and Sb) are known to show rich allotropic transformation when grown in the form of thin-films due to their semimetallic bonding character [7,[11][12][13]. Both Bi and Sb host spin-polarized surface states, potentially applicable in spin-sources and/or filters in the field of spintronics [3].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, low-dimensional systems have attracted considerable scientific interest as they often show anomalous atomic and electronic structure and can display many exotic properties such as layer-dependent nontrivial band topology, the appearance of Dirac Fermions, QSH effects, etc. which are often absent in their bulk form. − In particular, group V elements (e.g., Bi and Sb) are known to show rich allotropic transformation when grown in the form of thin-films due to their semimetallic bonding character. ,− Both Bi and Sb host spin-polarized surface states, potentially applicable in spin-sources and/or filters in the field of spintronics …”

Section: Introductionmentioning

confidence: 99%

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Quantum Size Effects, Multiple Dirac Cones, and Edge States in Ultrathin Bi(110) Films

Kundu

Valla

2021

ACS Appl. Mater. Interfaces

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The presence of inherently strong spin-orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac fermion states in the odd-bilayer (BL) films, originating from dangling pz orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-Tc superconductor, Bi2Sr2CaCu2O 8+δ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum Size Effects, Multiple Dirac Cones, and Edge States in Ultrathin Bi(110) Films

Kundu

Valla

2021

ACS Appl. Mater. Interfaces

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“…Modification of the Au catalyst by adding SnS causes strongly elongated nuclei (Figure S8b) that template the formation of bicrystal nanoribbons. Bi has shown a tendency of forming elongated islands on Si substrates . SEM images suggest that these elongated Bi islands template an initially wide bicrystal that gradually narrows and ultimately terminates in a tip region with constant width (Figure S8c).…”

Section: Resultsmentioning

confidence: 99%

1D Germanium Sulfide van der Waals Bicrystals by Vapor–Liquid–Solid Growth

et al. 2022

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Defects in two-dimensional and layered materials have attracted interest for realizing properties different from those of perfect crystals. Even stronger links between defect formation, fast growth, and emerging functionality can be found in nanostructures of van der Waals crystals, but only a few prevalent morphologies and defect-controlled synthesis processes have been identified. Here, we show that in vapor–liquid–solid growth of 1D van der Waals nanostructures, the catalyst controls the selection of the predominant (fast-growing) morphologies. Growth of layered GeS over Bi catalysts leads to two coexisting nanostructure types: chiral nanowires carrying axial screw dislocations and bicrystal nanoribbons where a central twin plane facilitates rapid growth. While Au catalysts produce exclusively dislocated nanowires, their modification with an additive triggers a switch to twinned bicrystal ribbons. Nanoscale spectroscopy shows that, while supporting fast growth, the twin defects in the distinctive layered bicrystals are electronically benign and free of nonradiative recombination centers.

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“…E.g. in both materials surface electronic states exist 3–5 and in the case of Sb(111), charge density waves have been observed. 6 Both Bi and Sb are also elemental building blocks of binary topological insulators with their unique electronic structure which exhibits a protected conducting surface as well as insulating bulk states.…”

Section: Introductionmentioning

confidence: 99%

“…6 Both Bi and Sb are also elemental building blocks of binary topological insulators with their unique electronic structure which exhibits a protected conducting surface as well as insulating bulk states. 5,[7][8][9][10][11][12][13][14] More importantly, stepped surfaces are particularly interesting for the realisation of quasi one-dimensional systems 15 and they provide an ideal playground to study e.g. site-specific catalytic reactivity [16][17][18] or ice formation at a highly corrugated adsorption template.…”

Section: Introductionmentioning

confidence: 99%