Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam assisted deposition

Esch, Stefanie; Breeman, M.; Morgenstern, Markus; Michely, Thomas; Comşa, George

doi:10.1016/0039-6028(96)00744-3

Cited by 59 publications

(32 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…They include low-energy ion deposition (LEID) [1] and ion beam assisted deposition (IBAD) techniques where energetic ion beams with energies ranging from a few eV up to a few keV are used. When the ratio of bombarding ions to the deposited atoms is moderately low ranging from 0.1% to 10%, thin films with improved smoothness can be obtained under less stringent deposition conditions than in ordinary molecular beam epitaxy [2,3].…”

mentioning

confidence: 99%

“…In HTD it has been observed that island growth is in striking contrast to ordinary thermal deposition: the island density is larger, the average island size is smaller [2,3], and distributions are considerably broader [1,3]. Various atomistic processes such as ion enhanced mobilities, cluster dissociation [1], and defect creation [2,4] have been suggested to explain this.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Koponen

Jahma²,

Rusanen³

et al. 2004

Phys. Rev. Lett.

View full text Add to dashboard Cite

We present a rate equation model for submonolayer island growth under conditions where hyperthermal deposition techniques such as low-energy ion deposition are employed to achieve smooth layerby-layer growth. By asymptotic analysis, we demonstrate that the model exhibits stationary behavior with well-defined dynamic and growth exponents and , respectively, in the limit of small and high detachment rates. We verify these predictions by using the particle coalescence simulation method. The simulations reveal the existence of a relatively sharp transition regime with an increasing detachment rate of adatoms from high values of the growth exponent 1 to much smaller values of determined by detachment and island diffusion processes. Our numerical results for the island size distribution indicate an anomalously high number of small islands, in agreement with available experimental data.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Koponen

Jahma²,

Rusanen³

et al. 2004

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…As a result, it was unable to dominate in film growing. S. Esch et al found that Pt films grown on Pt (111) substrate exhibited an improved epitaxial growth by ion beam assisted deposition [15]. Ion bombardment only provided energy to enhance mobility in the vicinity of an ion impact.…”

Section: Resultsmentioning

confidence: 98%

Effect of Argon ion irradiation on grain orientation in platinum thin films

Jiang¹,

Jiang²,

Ren³

et al. 2005

Thin Solid Films

View full text Add to dashboard Cite

“…Each ion removes roughly one atom and creates a large local density of adatoms around the ion impact site that condense into islands. The inset in Figure 20.31b shows the very high density of adatom islands created after one sputter pulse on Pt(111) at 400 K [286]. The film morphology after deposition of 5 ML at 400 K with periodic sputter pulses is almost perfectly flat (Figure 20.31b), while the slightly CO-contaminated system forms mounds (Figure 20.31a) very much as the clean system does, compare Figure 20.29a.…”

Section: Periodic Ion Bombardmentmentioning

confidence: 96%

Epitaxial Growth of Thin Films

Brune

2014

Surface and Interface Science

View full text Add to dashboard Cite

This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, in crystal structures differing from their bulk. If film and substrate have the same crystal lattices, but different lattice constants, the film will be under strain, that is, it will have a slightly different lattice constant than in its own bulk. Both effects, together with the electronic hybridization at the interface, lead to novel properties.One distinguishes homo-and heteroexpitaxy, where the former refers to the growth on one element on a crystal surface of its own and the latter refers to the more general case, where film and substrate materials are different. Note that the first distinguishes itself from crystal growth, as we will see in more detail later.We start this chapter by giving examples from technology, illustrating where thin epitaxial films are used and outlining potential applications that become reality once we are able to grow the respective thin film sequences. We then contrast thin film and crystal growth, respectively, with kinetics and thermodynamics of growth. We introduce the deposition techniques used in epitaxial thin film growth and then discuss the classical thermodynamic approach, which led to the definition of the growth modes. These modes refer to the morphology taken on by a system grown close to thermodynamic equilibrium. Often films are grown far away from equilibrium and their morphology is determined by kinetics, that is, it is the result of the microscopic path taken by the system during growth. This path is determined by the hierarchy of rates of the single atom, cluster or molecular precursor displacements as compared to the deposition rate. Owing to the importance of kinetics, we focus in the rest of the chapter on the kinetic description of growth. In order to simplify the topic, we start with coverages below one atomic layer that is referred to as a monolayer. The first submonolayer part will be on nucleation, followed by a discussion of island shapes that, very much like snowflakes, tell us about the elementary processes that took place during their formation. We then discuss island coarsening, either by evaporation of atoms from their edges, referred to as the Ostwald ripening, or by the diffusion and subsequent coalescence of entire islands, referred to as the

show abstract

Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam assisted deposition

Cited by 59 publications

References 39 publications

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Effect of Argon ion irradiation on grain orientation in platinum thin films

Epitaxial Growth of Thin Films

Contact Info

Product

Resources

About