Nucleation control of CVD growth silicon nanocrystals for quantum devices

Baron, T.; Mazen, F.; Busseret, C.; Souifi, A.; Mur, P.; Fournel, Frank; Séméria, M. N.; Moriceau, H.; Aspard, B.; Gentile, P.; Magnéa, N.

doi:10.1016/s0167-9317(02)00447-1

Cited by 46 publications

(34 citation statements)

References 7 publications

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“…It is important in situations ranging from the condensation and freezing of water (e.g. rain, snow, freezing), [1] the formation of bones and teeth and the correlation between synergetic structures and their superior properties, [2] to semiconductor/IT and nanotechnologies, [3,4] because in most cases nucleation determines whether a phase will form, how the formation will occur, and what structure will be formed. [5,6] Therefore, it is the cornerstone for many very important modern technologies, including life/nanosciences and engineering.…”

mentioning

confidence: 99%

Nucleation: What Happens at the Initial Stage?

2009

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Crystallizing growth: The initial structure of crystal nuclei is supersaturation-dependent. At low degrees of supersaturation, liquid-like nuclei are formed initially, which undergo a continuous structure transition from liquid-like to crystal-like as the size N increases. This gradual structure evolution substantially lowers the nucleation barrier DeltaG* and facilitates the nucleation relative to the formation of crystal-like clusters from the beginning.

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confidence: 99%

Nucleation: What Happens at the Initial Stage?

2009

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“…[8][9][10] This technique consists of anodizing the surface of monocrystalline silicon wafers by using short single pulses of current in a low concentration of hydrofluoric acid electrolytes and using a current density in a specific anodization regime situated between pore formation and electropolishing. 11,12 This electrochemical etching has the advantage of being a fast and relatively low-cost technique.…”

Section: Introductionmentioning

confidence: 99%

Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process

Ayari-Kanoun

Jaouad

Souifi

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that it is possible to use inductively coupled plasma etching systems in order to etch nanometric layers, despite the fact that these systems are designed for deep and fast etching. A stable process is developed for shallow etching of silicon nitride nanoholes. The influence of different plasma etching parameters on silicon nitride nanohole properties is analyzed. 30 nm deep nanoholes of approximately 30 nm diameter, near vertical sidewalls and a good control of the selectivity are achieved. The overall process provides a simple and reproducible approach based on shallow inductively coupled plasma etching to obtain high quality nanosized silicon nitride templates. A suitable process for organized arrays of 10 nm diameter silicon nanocrystals realized by electrochemical etching is shown.

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“…Since then, extensive studies have been carried out on Si nanostructures for integrating opto-electronic devices along with CMOS chip. There are many techniques to synthesise Si nanoparticles, e.g., chemical 12 , mechanical 13 , chemical vapour deposition (CVD) 14 , laser ablation 15 , scanning probe microscopy 16 , etc. Besides the synthesis process, their characterisation is extremely important.…”

Section: Introcuctionmentioning

confidence: 99%

Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

Kumar¹,

Agarwal²,

Kumar³

et al. 2008

DSJ

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Semiconductor nanostructures such as quantum wells, quantum wires or quantum dots exhibit superior properties in comparison to their bulk forms. Quantum dots are described as zero-dimensional electron gas system, as carriers are confined in all the three directions. Density of states is discrete function of energy. Allowed energy spectrum is discrete like in an atom. Energy band gap is broadened due to carriers confinement. Semiconductor quantum dots exhibit typical coulomb blockade characteristic which is exploited for development of new generation of nanoelectronic devices namely single-electron transistor, memories, etc, whose operation depends on quantum mechanical tunneling of carriers through energy barriers. These semiconductor nanostructures emit light in visible range upon excitation by optical means. In recent years, research has been focused on different nano-scale materials; metals (Au, Ag, Fe, Mn, Ni), metal oxides (SnO 2 , ZnO 2 ), compound semiconductors (GaAs, GaAlAs, CdSe, CdS, GaN), and elemental semiconductors (silicon and germanium). As silicon is the most favoured material in the established integrated circuits manufacturing technology, research is being done for controlled synthesis and characterisation of Si nanoparticles. The Si nanoparticles have been synthesised on oxide and nitride layers over Si substrate by IC technology compatible low-pressure chemical vapour deposition technique. Atomic force microscopy (AFM) characterisation has been extensively carried out on the samples. It is shown that the tip radius and shape of tip lead to less accurate estimate of the actual size. The AFM images have been evaluated based on the real surface topography and shape of the tip. Photoluminescence (PL) studies have been performed to characterise the samples. The PL measurements showed visible light emission from synthesised silicon nanoparticles.

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Nucleation control of CVD growth silicon nanocrystals for quantum devices

Cited by 46 publications

References 7 publications

Nucleation: What Happens at the Initial Stage?

Nucleation: What Happens at the Initial Stage?

Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process

Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

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