Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane

Abstract

The nucleation of copper on TiN and SiO2 surfaces has been investigated using a collimated molecular beam of hexafluroacetylacetonate copper(I) trimethylvinylsilane in ultrahigh vacuum. The Cu thin film precursor was delivered using a bubbler with H2 as the carrier gas and the substrate temperature was varied from 150 to 260 °C. Ex situ analysis of thin film morphology and microstructure has been conducted using scanning electron microscopy. On SiO2 surfaces the Cu nuclei density reaches a maximum near 5×1010 cm−2, nearly independent of substrate temperature. In contrast, on TiN surfaces the maximum nuclei density is strongly dependent on temperature, varying nearly two orders of magnitude from 150 to 260 °C. On TiN the nucleation process is described well by established kinetic models where a maximum in nuclei density (Nmax) is predicted with respect to the time, and where this quantity exhibits an Arrhenius dependence on substrate temperature.

First-principles study of adhesion atCu/SiO2interfaces

“…Copper in particular, a noble metal with a high bulk thermal and electrical conductivities, and apparently low electromigration rate, 1 is an excellent candidate for interconnects in integrated circuitry on dielectric substrates, and thus the formation of a strong and highly reliable interface between copper and glass has been an issue of primary importance. Unfortunately, Cu films are often reported to bind rather poorly to oxidebased glass substrates, [2][3][4][5][6][7][8][9][10][11][12][13][14][15] and films that do adhere at room temperature can show diminished adhesivity after thermal cycling, 8,12 an effect often attributed to differences of thermal expansion between Cu and the oxide substrate. 8 In many studies, poor bonding is frequently explained by noting that since Cu does not reduce SiO 2 , a graded oxide layer facilitating the adhesion is unable to form.…”

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

“…There is also a report on a molecular beam study of the ALD of copper films, used for interconnects, on TiN and SiO 2 substrates using hexafluroacetylacetonate copper(I) trimethylvinylsilane and molecular hydrogen [558]. Film deposition starts at specific nucleation centers.…”

Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique

“…21,22 Furthermore, the growth of ultra-thin metals or alloys lms is oen challenged by layer uniformity and discontinuities associated with agglomeration, island and/or cluster formation. [23][24][25][26][27][28][29] Herein, we explore a different route to synthesize ultra-thin CoGe 2 lms (10-20 nm) via chemical vapor reaction using GeH 4 , which is catalytically initiated by the solid Co layers. By systematic investigation of the solid-vapor reaction conditions on different thicknesses of Co with GeH 4 (exposure temperature and reaction time) we followed the growth evolution of CoGe 2 thin lms.…”