1989
DOI: 10.1016/0039-6028(89)90763-2
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Nucleation of Cu on Si(111)7 × 7 and atomic structure of the Cu/Si(111) interface

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Cited by 51 publications
(5 citation statements)
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“…It was also observed that they prefer the 'faulted' half of the 7 × 7 structure, resulting in preferential formation of silicide islands there during later stages of the reaction. A similar preference for silicide growth on the faulted half of 7 × 7 has been observed for all transition metals measured to date, including Fe, Co, Ni, Pd, Ti, plus Cu and other nontransition metals as well [31,[34][35][36][37].…”
Section: Atomic Scale Precursorssupporting
confidence: 57%
“…It was also observed that they prefer the 'faulted' half of the 7 × 7 structure, resulting in preferential formation of silicide islands there during later stages of the reaction. A similar preference for silicide growth on the faulted half of 7 × 7 has been observed for all transition metals measured to date, including Fe, Co, Ni, Pd, Ti, plus Cu and other nontransition metals as well [31,[34][35][36][37].…”
Section: Atomic Scale Precursorssupporting
confidence: 57%
“…The ratio of Ge nanoclusters on the faulted half to that on the unfaulted half of Si(111)-(7 × 7) unit cell is about 3 : 2. Compared with the adsorption of a variety of metals, [5][6][7][8][9][10][11][12][13][14][15][16][17][18] the adsorption selectivity of Ge atoms on the faulted half of Si(111)-(7 × 7) surface is not obvious.…”
Section: Methodsmentioning
confidence: 99%
“…Recent studies demonstrated the feasibility and possibility of growing self-organized nanostructures on periodic solid surfaces. Ordered arrays of two-dimensional nanodots, including Tl, In, Ga, Al, Sn, Pb, Ge, Au, Ag, [5][6][7][8][9][10][11][12][13][14][15][16][17][18] have been fabricated by taking advantage of surface-mediated clustering on a growth template of the Si(111)-(7 × 7) surface. Constructing ordered nanoscale structures for the SiGe system is important as a result of their potential application in photoelectronic devices and compatibility with Si processing technologies.…”
Section: Introductionmentioning
confidence: 99%
“…Vitali et al, Li et al, Jarolimek et al, and Tosch and Neddermeyer found that tiny nanoclusters of different metals (Tl, In, Ag, Cu) can nucleate inside the faulted half unit cell (FHUC) of Si(1 1 1)-(7 · 7) surface at 300 or 400 K [1][2][3][4]. Bode et al imaged individual metallic Fe islands on a carbon (15 · 3) reconstructed W(1 1 0) surface at 300 K [5], and Thornton et al presented evidence that Cu clusters nucleate between the bridging O rows on TiO 2 (1 1 0) at 300 K [6].…”
Section: Introductionmentioning
confidence: 99%
“…There is increasing evidence from STM measurements to demonstrate site-specific nucleation of metal clusters at room temperature [1][2][3][4][5][6]. Vitali et al, Li et al, Jarolimek et al, and Tosch and Neddermeyer found that tiny nanoclusters of different metals (Tl, In, Ag, Cu) can nucleate inside the faulted half unit cell (FHUC) of Si(1 1 1)-(7 · 7) surface at 300 or 400 K [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%