Nucleation of misfit dislocations and plastic deformation in core/shell nanowires

Aifantis, Katerina E.; Kolesnikova, A. L.; Романов, А. Е.

doi:10.1080/14786430701589350

Cited by 70 publications

(30 citation statements)

References 29 publications

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“…The previous result can be extended [12] to the case of two isotropic materials with different values of the shear modulus, but the same value of the Poisson ratio. In terms of Lamé coefficients, that means λ s /λ c = μ s /μ c .…”

Section: The Simple Case Of Elastically Isotropic Materialsmentioning

confidence: 92%

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Strain in crystalline core-shell nanowires

Ferrand

Cibert

2014

Eur. Phys. J. Appl. Phys.

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Abstract. We propose a comprehensive description of the strain configuration induced by the lattice mismatch in a core-shell nanowire with circular cross-section, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. We use an analytical approach which fully exploits the symmetry properties of the system. Explicit formulae are given for nanowires with the wurtzite structure or the zinc-blende structure with the hexagonal/trigonal axis along the nanowire, and the results are compared to available numerical calculations and experimental data on nanowires made of different III-V and II-VI semiconductors. The method is also applied to multishell nanowires, and to core-shell nanowires grown along the 0 0 1 axis of cubic semiconductors. It can be extended to other orientations and other crystal structures.

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Section: The Simple Case Of Elastically Isotropic Materialsmentioning

confidence: 92%

“…In terms of Lamé coefficients, that means λ s /λ c = μ s /μ c . Complete expressions of the stress tensor are given in reference [12]. We will generalize these expressions in the following section taking into account the crystal structure.…”

Section: The Simple Case Of Elastically Isotropic Materialsmentioning

confidence: 99%

Strain in crystalline core-shell nanowires

Ferrand

Cibert

2014

Eur. Phys. J. Appl. Phys.

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“…According to Ref. 22, the stress induced in the core by a lattice mismatched shell covering an infinitely long cylindrical NW is uniform, equal to:…”

mentioning

confidence: 99%

Optical properties of single ZnTe nanowires grown at low temperature

Artioli

Rueda-Fonseca

Stepanov

et al. 2013

Applied Physics Letters

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Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 • C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per µm 2 ). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are 111 oriented. Low temperature microphotoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires. There is currently a wide-spread interest for semiconductor nanowires (NWs), driven by their potential to constitute suitable building blocks for future nanoelectronic and nanophotonic devices. 1 During the past decade, selenide and telluride II-VI NWs have been extensively investigated for various applications such as nano-pillar solar cells, 2 photodetectors 3 or single photon sources. 4 Among II-VI's, ZnTe based NWs are particularly promising as offering a large range of potentialities. They can be grown by molecular beam epitaxy (MBE) using gold particles as catalyst. They can be efficiently doped electrically. 5 They can also be doped with magnetic impurities, 6,7 while the large difference between the temperatures suitable for the growth of GaAs NWs and for the incorporation of Mn as substitutional impurities makes the growth of (Ga,Mn)As NWs challenging. 8 As (Zn,Mn)Te can be doped strongly p-type so that ferromagnetism appears and transport studies are feasible in 2D, 9 ZnTe-based NWs are attractive for a basic study of spintronics mechanisms in 1D. In addition, CdTe quantum dots can be incorporated and used as a single photon source 10 or as a very sensitive optical probe of the spin properties. 11 A good control and the optimization of the growth conditions are prerequisites to improve the electronic and optical properties of the NWs. We present the MBE growth and the structural analysis of ultra-low density ZnTe NWs and we show that their high crystalline quality allows us to observe micro-photoluminescence (µPL) and cathodoluminescence (CL) emission from single NWs.ZnTe NWs were grown by MBE, using gold particles as a catalyst. A thin layer of gold was deposited on a 500 nm-thick ZnTe(111) buffer layer previously grown on a GaAs(111)B substrate. Gold droplets were formed at 350 • C and the NWs were grown at the same temperature.

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“…However, the misfit stress, which results from the misfit of the crystal lattices between the inclusion and matrix, seriously influences the properties of the nanocomposites. The misfit stress can be partially relaxed by the formation of misfit defects at the phase interfaces [3][4][5][6][7][8][9]. Thus, it is desired to understand the mechanism and the critical condition for the nucleation of misfit defects.…”

Section: Introductionmentioning

confidence: 99%

“…A lot of researches have focused on the nucleation of various dislocation configurations at or near phase boundary in different materials, such as misfit dislocations and misfit dislocation dipole in nanowires composites [10][11][12][13][14], misfit dislocation loop in nanocomposites with dilatational inclusions as quantum dots or wires [15] and misfit dislocation dipole in core/shell nanowires [8,16]. Generally, the interface is treated as perfect and classical theory of elasticity is employed in the aforementioned publications.…”

Section: Introductionmentioning

confidence: 99%

The competitive nucleation of misfit dislocation dipole and misfit extended dislocation dipole in nanocomposites

et al. 2017

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Nanocomposites have shown excellent mechanical and physical properties; however, their properties are seriously affected by the nucleation of misfit defects at the interfaces between the inclusion and the matrix. Based on the energy rule, the nucleation criteria for a misfit extended dislocation dipole (MEDD) and a misfit screw dislocation dipole (MSDD) are analytically given. Furthermore, we systematically investigate the effects of the geometrical and mechanical factors, such as the radius of the inclusion, the misfit strain, the shear modulus ratio and the stacking fault energy, on the competitive nucleation between MEDD and MSDD. It is found that the stacking fault energy has a decisive effect on the competitive nucleation of MEDD and MSDD. The critical stacking fault energy for the nucleation transferring from MSDD to MEDD increases with the increase of the shear modulus ratio and decrease of the misfit strain, while it is almost not affected by the inclusion radius.

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Nucleation of misfit dislocations and plastic deformation in core/shell nanowires

Cited by 70 publications

References 29 publications

Strain in crystalline core-shell nanowires

Strain in crystalline core-shell nanowires

Optical properties of single ZnTe nanowires grown at low temperature

The competitive nucleation of misfit dislocation dipole and misfit extended dislocation dipole in nanocomposites

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