Nucleation of silicon on Si3N4 coated SiO2

Brynjulfsen, I.; Arnberg, L.

doi:10.1016/j.jcrysgro.2011.07.003

Cited by 22 publications

(8 citation statements)

References 15 publications

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“…The main difference between the samples from the different groups is that one requires a nucleation phase prior to initial growth, while the second does not, and the nucleation requires a supercooling. Several groups have measured the supercooling of silicon melt on silicon nitride powder coating before nucleation [20][21][22], and the results vary between 0 and 40 K. However, it has been shown that the α-silicon nitride polymorph of which this coating is predominantly made is transformed to β-polymorph upon contact with silicon melt, which is accompanied by an increase in particle size [13,22]. The more recent of the studies which account for this reaction report a supercooling in the range of 0 to 10 K. The minimum supercooling required to initiate faceted dendritic growth in a silicon melt is was reported by Fujiwara et al to be 10 K [23].…”

Section: Mechanisms Controlling Grain Boundary Densitymentioning

confidence: 99%

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Stokkan

Song²,

Ryningen

2018

Crystals

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Wafers from three heights and two different lateral positions (corner and centre) of four industrial multicrystalline silicon ingots were analysed with respect to their grain structure and dislocation density. Three of the ingots were non-seeded and one ingot was seeded. It was found that there is a strong correlation between the ratio of the densities of (coincidence site lattice) CSL grain boundaries and high angle grain boundaries in the bottom of a block and the dislocation cluster density higher in the block. In general, the seeded blocks, both the corner and centre block, have a lower dislocation cluster density than in the non-seeded blocks, which displayed a large variation. The density of the random angle boundaries in the corner blocks of the non-seeded ingots was similar to the density in the seeded ingots, while the density in the centre blocks was lower. However, the density of CSL boundaries was higher in all the non-seeded than in the seeded ingots. It appears that both of these grain boundary densities influence the presence of dislocation clusters, and we propose they act as dislocation sinks and sources, respectively. The ability to generate small grain size material without seeding appears to be correlated to the morphology of the coating, which is generally rougher in the corner positions than in the middle. Furthermore, the density of twins and CSL boundaries depends on the growth mode during initial growth and thus on the degree of supercooling. Controlling both these properties is important in order to be able to successfully produce uniform quality high-performance multicrystalline silicon by the advantageous non-seeding method.

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Section: Mechanisms Controlling Grain Boundary Densitymentioning

confidence: 99%

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Stokkan

Song²,

Ryningen

2018

Crystals

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“…Brynjulfsen and Arnberg [113] studied silicon nucleation on the Si 3 N 4 -coated SiO 2 substrate and found that there were no significant differences in nucleation undercooling for various coatings. Brynjulfsen and Arnberg [113] studied silicon nucleation on the Si 3 N 4 -coated SiO 2 substrate and found that there were no significant differences in nucleation undercooling for various coatings.…”

Section: Nucleation and Grain Controlmentioning

confidence: 99%

Multicrystalline Silicon Crystal Growth for Photovoltaic Applications

Lan

Hsu

Nakajima

2015

Handbook of Crystal Growth

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“…The area shown by the red circle is directly below the Si 3 N 4 particles. Many small grains can be observed near the red circle because Si 3 N 4 particles act as strong nucleation sites, resulting in the generation of small grains, even though Si 3 N 4 particles may contain some other elements and the coating alone does not play an important role in the nucleation by undercooling [21]. The other half area of the cross section of the ingot has very large grains because a single seed crystal acted as a nucleation site.…”

Section: Effect Of Si 3 N 4 Particles On the Distribution Of Grains Amentioning

confidence: 99%

Growth of high-quality multicrystalline Si ingots using noncontact crucible method

Nakajima

Morishita

Murai

et al. 2012

Journal of Crystal Growth

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Nucleation of silicon on Si3N4 coated SiO2

Cited by 22 publications

References 15 publications

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Multicrystalline Silicon Crystal Growth for Photovoltaic Applications

Growth of high-quality multicrystalline Si ingots using noncontact crucible method

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