Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells

Gao, Bing; Kakimoto, Koichi

doi:10.1007/978-4-431-55800-2_5

Cited by 2 publications

(1 citation statement)

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“…Further information on the numerical simulation of the impurities and defects has been reported elsewhere. 51) This review paper surveys methods for improving the conversion efficiency of PV cells by controlling the quality of the crystalline silicon grown by the CZ and DS methods. The main focus of this paper is controlling the concentration of oxygen and carbon impurities in silicon crystals grown by the CZ and DS methods to increase the lifetime of carriers, which directly affect the conversion efficiency of PV cells.…”

Section: Introductionmentioning

confidence: 99%

Silicon bulk growth for solar cells: Science and technology

Kakimoto

Gao

Nakano

et al. 2017

Jpn. J. Appl. Phys.

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The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both singlecrystalline and multicrystalline wafers.

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Section: Introductionmentioning

confidence: 99%