Numerical analysis of inhomogeneous Schottky diode with discrete barrier height patches

Kaushal, Priyanka; Chand, Subhash

doi:10.1080/00207217.2015.1082201

Cited by 10 publications

(5 citation statements)

References 20 publications

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“…24) In order to attain a complete understanding of the Schottky diode characteristics it is therefore necessary to model the I-V-T curves by using detailed physical models starting from specific assumptions. 25,26) In this paper, the experimental forward I-V characteristics of Al/Ti/4H-SiC SBDs are investigated by means of a combined numerical and analytical simulation study which involves different current transport mechanisms in a wide range of temperatures (85-445 K). More in detail, by decreasing the temperature, an increase of the diode ideality factor, a decrease of the apparent BH, and significant deviations from linearity of the Richardson plot are shown.…”

Section: Introductionmentioning

confidence: 99%

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

Zeghdar

Dehimi

Pezzimenti

et al. 2019

Jpn. J. Appl. Phys.

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The current-voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85-445 K temperature range by means of a combined numerical and analytical simulation study. Simulation results showed a good agreement with measurements in the whole explored current range from 10 μA to 10 mA. The main device electrical parameters, namely the barrier height (BH) and ideality factor, were found to be strongly temperature-dependent. In particular, the ideality factor decreases while the BH increases with increasing temperature. The observed behaviours have been successfully interpreted by using the thermionic emission theory with a triple Gaussian distribution of the BH in three different temperature ranges, i.e. 85 ⩽ ΔT 1 ⩽ 135 K, 180 ⩽ ΔT 2 ⩽ 270 K, and 315 ⩽ ΔT 3 ⩽ 445 K. The corresponding Richardson constants areand A 3 * = 173.21 A cm −2 K −2 , respectively. These values are close to the theoretical result of 146 A cm −2 K −2 expected for n-type 4H-SiC. Finally, it has been highlighted that the current flowing through the Schottky junction is also determined by the thermionic-field emission mechanism.

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Section: Introductionmentioning

confidence: 99%

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

Zeghdar

Dehimi

Pezzimenti

et al. 2019

Jpn. J. Appl. Phys.

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“…However, Al/4H-SiC SBDs under forward and reverse bias often show undesirable I-V characteristics that reveal significant variations of both the barrier height (BH) and ideality factor with temperature [18,19]. Various studies for the origin of such divergence has been proposed by taking into consideration of the interface state density distribution [20], the image-force lowering [21], the recombination and quantum-mechanical tunneling [22,23], and the distinctive high level of TFE [24], as well as the lateral distribution of BH inhomogeneities [25,26], influence the device current capabilities [27,28]. Therefore, to accomplish a complete understanding of the current transport across the diffusion welded Al/4H-SiC contacts SBD characteristics, it is necessary to model the I-V-T curves by using detailed physical models starting from specific assumptions.…”

Section: Resultsmentioning

confidence: 99%

“…This variation is assumed to become evident due to the thermal annealing process during DW technology as well as the cleaning process before fabrication. Total forward current affected by each of these temperatures at forward bias V for current carrying an ideal homogeneous SBD (without considering small series resistance) can be better described by thermionic emission theory [28],…”

Section: Resultsmentioning

confidence: 99%

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Ziko

Koel

Rang

et al. 2020

MSF

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The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

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“…However, the barrier height is of concern for current carrier transport mechanisms through the metal and 4H-SiC barrier interfaces. Therefore, to accomplish a complete understanding of the current transport across the diffusion welded Al-Foil/p-4H-SiC contact SBD characteristics, it is necessary to take into the consideration of thermionic emission (TE) [19], interface state density distribution [20], the image-force lowering [21], the recombination and quantum-mechanical tunneling [22,23], distinctive high level of TFE [24] and also the lateral distribution of BH inhomogeneities [25,26] that influence the device current capabilities [27,28]. The DLS-83D measurement unit exhibits a forward I-V characteristic, as shown in Figure 2.…”

Section: Temperature Dependence Of I-v Characteristicsmentioning

confidence: 99%

“…This variation in the current handling capabilities of identically manufactured devices may be due to the thermal annealing process integrated during DW technology, as well as the cleaning process before fabrication. The total forward current that is affected by each of these temperatures at forward bias voltage for current-carrying an ideal homogeneous SBD (without considering small series resistance) can be better described by thermionic emission theory [28],…”

Section: Temperature Dependence Of I-v Characteristicsmentioning

confidence: 99%

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

et al. 2020

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The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

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Numerical analysis of inhomogeneous Schottky diode with discrete barrier height patches

Cited by 10 publications

References 20 publications

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

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