2020
DOI: 10.1002/er.5720
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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

Abstract: Conventional silicon heterojunction solar cells employ defects-prone a-Si:H layers for junction formation and passivation purposes. Substituting these layers with hole-selective MoO x and electron-selective TiO x can reduce parasitic absorption and energy band offsets issues associated with doped silicon films. In this work, dopant-free asymmetric heterostructure Si solar cells are studied with and without SiO 2 passivation layer, and their performance has been compared. The inclusion of ultrathin SiO 2 insula… Show more

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Cited by 13 publications
(5 citation statements)
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“…This innovative idea avoids the somewhat complex process for localized contacts and provides the advantage of full-area contact. 2 It is compatible with the current manufacturing line and high-temperature process conditions. In solar cells, a thin oxide layer is employed to offer complete-area passivation of greater quality, as well as an electron tunnelling function on the rear surface of the silicon wafer.…”
Section: Introductionmentioning
confidence: 93%
“…This innovative idea avoids the somewhat complex process for localized contacts and provides the advantage of full-area contact. 2 It is compatible with the current manufacturing line and high-temperature process conditions. In solar cells, a thin oxide layer is employed to offer complete-area passivation of greater quality, as well as an electron tunnelling function on the rear surface of the silicon wafer.…”
Section: Introductionmentioning
confidence: 93%
“…Currently, classic passivation (chemical passivation and field‐effect passivation) techniques have been applied for high‐efficiency Si solar cells. An alternative passivation strategy is chemical passivation (passivation materials including SiO 2 , a‐Si:H) and is based on a covalent bond formed between the Si surface atoms and atoms inside the passivation materials; [ 59 ] In contrast, field‐effect passivation (such as Al 2 O 3 , SiN x ) is linked to the use of an electric field provided by fixed charges in dielectric materials. [ 60 ] The porosity of the CNT film made the use of traditional passivation layers like a‐Si:H or SiN x difficult.…”
Section: Carbon/silicon Hj Solar Cellsmentioning
confidence: 99%
“…Although there is some information studying the feasible replacement and variations for the layer of tunnel oxide in TOPCon solar cells, strong investigation and improvement are extremely necessary for this area, which is deprived of negotiating the efficiency of the cell and its parametric factors. There are few new results on the conversion of the layer SiO 2 passivation to enhance the implementation on the solar cells containing particular deficiencies, polymer layer deposition, and accumulation of dopants to produce heterogeneous structures [111][112][113][114][115].…”
Section: Perspective For the Future Research And Overviewmentioning
confidence: 99%