“…We systematically examined 12 ETLs (Bi 2 S 3 , 50 , 51 ZrS 2 , 52 , 53 SnS 2 , 54 In 2 S 3 , 55 ZnS, 55 Zn 2 SnO 4 , 56 BaSnO 3 , 57 Al 2 O 3 , 58 , 59 WO 3 , 58 TiO 2 , 60 ZnO, 60 SnO 2 60 ) and 13 HTLs (MoS 2 , 62 CuO, 63 Cu 2 S, 64 FeS 2 , 65 Sb 2 S 3 , 66 SnS, 67 Cu 3 BiS 3 , 68 Cu 2 SnS 3 , 69 CuSbS 2 , 70 Cu 2 BaSnS 4 , 71 CuInGaS 2 , 72 Cu 2 ZnSnS 4 , 73 Cu 2 ZnSn 1– x Ge x S 4 73 ) to identify suitable transport layers for emerging BaZrS 3 chalcogenide perovskite devices ( Figure 4 ) and their simulation parameters are given in Table S1 . As previously discussed, we initially optimized SnO 2 (ETL), BaZrS 3 (absorber), and Cu 2 S (HTL) in our base device by varying the thickness, carrier concentration, and defect density.…”