2021
DOI: 10.24996/ijs.2021.62.2.17
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Numerical Analysis of SnO2/Zn2SnO4/n-CdS/p-CdTe Solar Cell Using the SCAPS-1D Simulation Software

Abstract: This research includes the use of CdTe in the design of a solar cell. The SCAPS-1D computer program was used to simulate thin cell capacity of CdTe/CdS by numerical analysis with the addition of a buffer layer (Zn2SnO4) to enhance cell efficiency. The thickness of the window layer (n-CdS) was reduced to 25nm with the inclusion of an insulating layer of 50 nm thickness to prevent leakage towards the forward bias with respect to the lower charge carriers. As for the absorber layer thickness (p-CdTe), it varied b… Show more

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Cited by 10 publications
(7 citation statements)
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“…We systematically examined 12 ETLs (Bi 2 S 3 , 50 , 51 ZrS 2 , 52 , 53 SnS 2 , 54 In 2 S 3 , 55 ZnS, 55 Zn 2 SnO 4 , 56 BaSnO 3 , 57 Al 2 O 3 , 58 , 59 WO 3 , 58 TiO 2 , 60 ZnO, 60 SnO 2 60 ) and 13 HTLs (MoS 2 , 62 CuO, 63 Cu 2 S, 64 FeS 2 , 65 Sb 2 S 3 , 66 SnS, 67 Cu 3 BiS 3 , 68 Cu 2 SnS 3 , 69 CuSbS 2 , 70 Cu 2 BaSnS 4 , 71 CuInGaS 2 , 72 Cu 2 ZnSnS 4 , 73 Cu 2 ZnSn 1– x Ge x S 4 73 ) to identify suitable transport layers for emerging BaZrS 3 chalcogenide perovskite devices ( Figure 4 ) and their simulation parameters are given in Table S1 . As previously discussed, we initially optimized SnO 2 (ETL), BaZrS 3 (absorber), and Cu 2 S (HTL) in our base device by varying the thickness, carrier concentration, and defect density.…”
Section: Resultsmentioning
confidence: 99%
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“…We systematically examined 12 ETLs (Bi 2 S 3 , 50 , 51 ZrS 2 , 52 , 53 SnS 2 , 54 In 2 S 3 , 55 ZnS, 55 Zn 2 SnO 4 , 56 BaSnO 3 , 57 Al 2 O 3 , 58 , 59 WO 3 , 58 TiO 2 , 60 ZnO, 60 SnO 2 60 ) and 13 HTLs (MoS 2 , 62 CuO, 63 Cu 2 S, 64 FeS 2 , 65 Sb 2 S 3 , 66 SnS, 67 Cu 3 BiS 3 , 68 Cu 2 SnS 3 , 69 CuSbS 2 , 70 Cu 2 BaSnS 4 , 71 CuInGaS 2 , 72 Cu 2 ZnSnS 4 , 73 Cu 2 ZnSn 1– x Ge x S 4 73 ) to identify suitable transport layers for emerging BaZrS 3 chalcogenide perovskite devices ( Figure 4 ) and their simulation parameters are given in Table S1 . As previously discussed, we initially optimized SnO 2 (ETL), BaZrS 3 (absorber), and Cu 2 S (HTL) in our base device by varying the thickness, carrier concentration, and defect density.…”
Section: Resultsmentioning
confidence: 99%
“…Influence of Different ETL and HTL. We systematically examined 12 ETLs (Bi 2 S 3 , 51,52 ZrS 2 , 53,54 SnS 2 , 55 In 2 S 3 , 56 ZnS, 56 Zn 2 SnO 4 , 57 74 Cu 2 ZnSn 1−x Ge x S 4 74 ) to identify suitable transport layers for emerging BaZrS 3 chalcogenide perovskite devices (Figure 4) and their simulation parameters are given in Table S1. As previously discussed, we initially optimized SnO 2 (ETL), BaZrS 3 (absorber), and Cu 2 S (HTL) in our base device by varying the thickness, carrier concentration, and defect density.…”
Section: Optimization Of Etl Absorber and Htl Parametersmentioning
confidence: 99%
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“…Thin-film solar cells are commercially used in several technologies, including cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and amorphous thin-film silicon (a-Si, TF-Si) [6][7][8]. On the other hand, cadmium (Cd) has frequently been used as an absorber layer material [9][10][11][12]. But it is also unfit for the environment.…”
Section: Introductionmentioning
confidence: 99%
“…Matin et al, 2010; Hossain et al, 2011;Ngoupo et al, 2015;Rassol et al, 2021Islam et al, 2011Matin et al, 2013; Matin and Dey,2014;Rassol et al, 2021 …”
mentioning
confidence: 99%