“…11, and this has been refined where the electric field gradients are higher. In this case, these are the regions near the inside-corner junctures of the structure, as illustrated in previous reports of current modeling of two-dimensional van der Pauw structures [9].…”
Section: Current-flow Modelingmentioning
confidence: 81%
“…A number of papers have followed a pioneering paper by van der Pauw [6] on the subject of sheet-resistance extraction. These have compared the merits and complexities of using four-terminal sheet resistors of different planar geometries, that is, for example, those patterned in a film of uniform composition and thickness with vertical sidewalls on the entire perimeter [7]- [9]. In all cases, an estimate of sheet resistance is obtained through a sequence of measurements.…”
This paper describes limitations of conventional methods of extracting sheet resistance from four-terminal sheet resistors incorporated into electrical linewidth test structures that are patterned in (110) monocrystalline silicon-on-insulator (SOI) films. Nonplanar sections of these structures render the extraction of sheet resistance by conventional techniques subject to systematic errors. The errors are addressed here by algorithms incorporating the results of finite-element currentflow analysis. The intended end application is to facilitate the use of the uniquely high repeatability and low cost of electrical critical dimension (CD) metrology as a secondary reference in a traceability path for CD-reference artifacts.
“…11, and this has been refined where the electric field gradients are higher. In this case, these are the regions near the inside-corner junctures of the structure, as illustrated in previous reports of current modeling of two-dimensional van der Pauw structures [9].…”
Section: Current-flow Modelingmentioning
confidence: 81%
“…A number of papers have followed a pioneering paper by van der Pauw [6] on the subject of sheet-resistance extraction. These have compared the merits and complexities of using four-terminal sheet resistors of different planar geometries, that is, for example, those patterned in a film of uniform composition and thickness with vertical sidewalls on the entire perimeter [7]- [9]. In all cases, an estimate of sheet resistance is obtained through a sequence of measurements.…”
This paper describes limitations of conventional methods of extracting sheet resistance from four-terminal sheet resistors incorporated into electrical linewidth test structures that are patterned in (110) monocrystalline silicon-on-insulator (SOI) films. Nonplanar sections of these structures render the extraction of sheet resistance by conventional techniques subject to systematic errors. The errors are addressed here by algorithms incorporating the results of finite-element currentflow analysis. The intended end application is to facilitate the use of the uniquely high repeatability and low cost of electrical critical dimension (CD) metrology as a secondary reference in a traceability path for CD-reference artifacts.
“…The results of these calculations are presented in figure 8. Reference [11] shows that larger Greek cross structures are less sensitive to short range non-uniformity in the resistivity of the conducting film being measured. Reference [11] shows that larger Greek cross structures are less sensitive to short range non-uniformity in the resistivity of the conducting film being measured.…”
Section: Fig 4 Results Of Kelvin Measurements Made On a Chromementioning
This paper presents the use of specially designed electrically testable structures to measure and characterise linewidths on both binary and alternating aperture phase-shifting masks (altPSM). The technique behind the use of these modified cross-bridge structures is explained together with the specific designs used to characterise both dense and isolated features. The practicality of measuring masks with and without anti-reflective chromium dioxide are discussed and the the difference in the repeatability of the measurements is presented. CD SEM measurements of these features are compared with those obtained electrically and an excellent correlation between the electrical dimension (ECD) and the dimension measured both on mask and wafer by SEM is shown. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/17/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 4889 313 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/17/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx
“…Each test chip consists of two 20 µm wide linear tracks 300 and 600 µm long with voltage taps for Kelvin measurements (Structures A and B), a similar curved 300 µm long track structure that mimics the reference electrode design on the Clark electrode (Structure D), and Greek crosses [7] (width 20 µm) for sheet resistance measurements (Structure C). The Greek cross structure effectively measures the resistivity of the area of the centre of the cross (400 µm 2 ) and will give a better indication of the spatial variability of the chlorination process than the bridge structure (area 6,000 µm 2 for the 300 µm long bridge).…”
Section: Test Structures For Ag/agcl Layer Thicknessmentioning
Robust and repeatable processes are required to fabricate reference electrodes for micro-scale integrated electrochemical sensors. One method for this is to produce a "silver/silver chloride" (Ag/AgCl) electrode through chemical chlorination of a thin film silver layer. This paper presents test structures, which can electrically characterise the process to aid process development and in-line control of the chlorination process.
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