Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs

Selmi, L.; Menozzi, Roberto; Gandolfi, P.; Riccò, B.

doi:10.1109/16.155872

Cited by 13 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, in transient analyses of certain demanding circuits (RAM cells, switched capacitors circuits, charge pumps), the Meyer model is known to give erroneous results. [13][14][15][16][17][18] A more accurate model of the intrinsic capacitances associated with the gate region of FETs requires an analysis of the variation of the charge distribution in the channel versus terminal bias voltages. For MOSFETs, the problem is normally simplified by assigning the channel charges to the various "intrinsic" terminals.…”

Section: C-v Modelingmentioning

confidence: 99%

Spice Modeling of Compound Semiconductor Devices

Iñı́guez

Fjeldly

Shur

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including circuit simulators such as SPICE.Hence, a strong impetus exists for discussing these crucial aspects of advanced device modeling for circuit simulators and other computer aided design (CAD) tools. A better understanding of these issues may help speed the transfer of knowledge on new processes and devices and allow the circuit design houses access to the latest in device technology with minimal delay.The FET models considered here are mostly based on the unified modeling concept, where continuous analytical expressions for current voltage (I-V) and capacitance voltage (C-V) characteristics are used for all bias conditions, with no discontinuities in derivatives to any order. 1 ' 2 A brief review of this modeling strategy is presented in Sec. 2.Proven device concepts such as metal-semiconductor FETs (MESFETs) and heterostructure FETs (HFETs) are solidly entrenched in the high-speed/highfrequency electronics market, and in high-power/high-temperature applications. The race for improved performance is evident in the compound semiconductor device technology, with a drive towards reduced dimensions, new material combinations, and improved and novel device structures. In Sec. 3, we consider recent progress in the modeling of GaAs based MESFETs and HFETs that includes improved descriptions of transistor characteristics, thermal effects, gate leakage, and device capacitances. [3][4][5][6] Device scientists and engineers worldwide are engaged in developing novel device technologies intended to meet the even more stringent demands of the future, including those posed by new and special applications. As an example, we consider in Sec. 4 the modeling of heterodimensional devices, including two-dimensional (2D) MESFETs and 2D resonant tunneling diodes and transistors, which utilize electronic systems of different dimensionality. These devices demonstrate remarkable properties in terms of short-channel effects, intrinsic capacitances, power dissipation and versatility in logic circuits. As another example, we consider in Sec. 5 devices fabricated from wide-bandgap semiconductors such as SiC and GaN. These devices, which presently attract a great deal of attention, have unique properties needed for high-power/high-frequency/high-temperature applications.Many of the device models discussed here have been implemented in the circuit simulator AIM-Spice, 7 which runs on PCs and on other workstation platforms supporting the WindowsNT operating syst...

show abstract