Numerical Analysis to Determine the Temperature-Dependent Charge Transport in CNTFET

Anjum, Nafisa; Ritu, Riffat Ara Islam; Adnan, Washik; Hasan, Md Ittehad; Nayan, Md Faysal

doi:10.1109/wiecon-ece54711.2021.9829666

Cited by 1 publication

(3 citation statements)

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“…The growing rate of drain to source currents in this region is nearly constant for different temperatures, while the temperature has little impact on the region of linear drain currents [13] . This is because CNTFETs have a high carrier mobility, which is not significantly affected by temperature.…”

Section: Resultsmentioning

confidence: 93%

“…As illustrated in the curves exhibiting the I-V characteristics of CNTFETs, when the gate to source voltage is less than the threshold voltage, the drain-to-source current remains zero. The transistor turns ON when the drain to source current flows and the gate voltage reaches the threshold value (V Th ) [13]. When the gate voltage is greater than the V Th , the charge carriers begin to pass the channel and the device gets turned ON which is on state current (𝐼 𝑂𝑁 ) .…”

Section: Resultsmentioning

confidence: 99%

“…This can lead to performance degradation in MOSFETs at high temperatures. CNTFETs, on the other hand, are less sensitive to temperature and can maintain their performance at higher temperatures [13].…”

Section: Resultsmentioning

confidence: 99%

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Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET

Nayan

Hossain

Sultana

et al. 2023

Preprint

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Carbon nanotubes have unique features and special properties that offer great potential for nano-electronic devices. Understanding the dependency of temperature and dielectric is essential to optimize the performance of carbon nanotube field effect transistors (CNTFETs).In this study, a numerical simulation model of semiconducting CNTFETs is presented to determine the electrical properties in the ballistic regime. This paper focused on the impact of temperature and dielectric constant to evaluate the input-output characteristic of CNTFET devices. Moreover, the study investigated the changes in threshold voltage as a function of gate dielectric constant and temperature in the nanometer regime. The findings emphasize the importance of integrating temperature and dielectric constant relationships in the design and optimization of CNTFETs, allowing for their effective incorporation into future electronic applications.

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Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%