Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible

Anbu, G.; Supervisor, M. Srinivasan; Aravindan, G.; Kumar, M. Avinash; Ramasamy, P.; Sun, Niefeng; Sun, Tongnian; Li, Zaoyang

doi:10.1016/j.jcrysgro.2022.126608

Cited by 5 publications

(2 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The segregation coe cients of O and C in silicon are 1.25 [27] and 0.07 [28], respectively. The O and C transport in a DS furnace is shown in Table 1, which is mainly divided into ve parts: (1) At high temperature, the O dissolves from the quartz crucible wall and comes into the silicon melt; (2) The dissolved O atoms are transported to the free surface by the melt ow, react with silicon atoms to form silicon monoxide (SiO) gas and evaporate from the free surface; (3) The SiO carried away by the argon to the graphite parts and reacts with them to form C monoxide (CO) gas; (4) CO is transferred back to the free surface of melt by argon ow in the furnace, and then dissolves into the silicon melt in the form of O and C atoms; (5) The O and C atoms in the melt are segregated into the crystal.…”

Section: Coupled Model Of Oxygen and Carbon Transportmentioning

confidence: 99%

“…However, the oxygen(O) and carbon(C) impurities are the main harmful impurities in the DS process [3]. The O and C impurities signi cantly in uence the electrical properties and mechanical strength of silicon wafers [4][5][6]. When the content of the C impurity exceeds its solubility limit in silicon, it will precipitate to form silicon carbide (SiC) particles and cause signi cant deterioration of the conversion e ciency of solar cells [7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Zhang

et al. 2023

Silicon

View full text Add to dashboard Cite

Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidi cation of silicon ingots. The performance of solar cells depends directly on the quality of the wafer and impurities distributions in silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidi cation furnaces are studied. The transient global simulation method is used to calculate the coupled thermal and ow elds in the furnaces, considering the convection of gas and melt, chemical reactions, and segregations of the impurities at the crystal-melt interface. The simulation results show that the distributions of oxygen and carbon impurities change signi cantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

show abstract

Section: Coupled Model Of Oxygen and Carbon Transportmentioning

confidence: 99%