Numerical application of the coupled cluster theory with localized orbitals to polymers. IV. Band structure corrections in model systems and polyacetylene
Abstract:We present the formalism for the correction of the band structure for correlation effects of polymers in the framework of a localized orbital approximation, using the quasiparticle model. For this purpose we use in an ab initio framework Mo/ller–Plesset perturbation theory in second order, the coupled cluster doubles method, and its linear approximation. The formalism is applied to a water stack and two different forms of a water chain as model systems to test the reliability of the approximations involved. Fr… Show more
“…It provides a set of canonical Bloch orbitals which are then subject to an orbital localization procedure that yields optimally localized Wannier orbitals; see, e.g.,. 7,8,42,43 Alternative approaches were introduced by Shukla et al 11,50 and Malrieu et al, 40 who carried out the ground-state HF calculation in real rather than reciprocal space and obtained directly localized orbitals.…”
Section: Introductionmentioning
confidence: 99%
“…4,5,6,7,8,9,10,11,12,13,14,15,16,17 DFT is strictly speaking a ground-state theory. Nevertheless the eigenvalues of the Kohn-Sham (KS) equations have been interpreted as the electronic energy bands.…”
Section: Introductionmentioning
confidence: 99%
“…The electron correlation problem is addressed in these schemes either by secondorder Møller-Plesset theory (MP2) 4,5,6,38,39,40 or coupledelectron-pair and coupled cluster methods. 7,8,9 By realizing that the correlation hole of an added electron or hole is a local object, use can be made of local operators. 27,28 The latter are most naturally associated with a set of real-space, localized Wannier orbitals (WO's).…”
We present a systematic study of the correlation-induced corrections to the electronic band structure of zinc-blende BN. Our investigation employs an ab initio wave-function-based local Hamiltonian formalism which offers a rigorous approach to the calculation of the polarization and local charge redistribution effects around an extra electron or hole placed into the conduction or valence bands of semiconducting and insulating materials. Moreover, electron correlations beyond relaxation and polarization can be readily incorporated. The electron correlation treatment is performed on finite clusters. In conducting our study, we make use of localized Wannier functions and embedding potentials derived explicitly from prior periodic Hartree-Fock calculations. The on-site and nearest-neighbor charge relaxation bring corrections of several eV to the Hartree-Fock band gap. Additional corrections are caused by long-range polarization effects. In contrast, the dispersion of the Hartree-Fock bands is marginally affected by electron correlations. Our final result for the fundamental gap of zinc-blende BN compares well with that derived from soft x-ray experiments at the B and N K-edges.
“…It provides a set of canonical Bloch orbitals which are then subject to an orbital localization procedure that yields optimally localized Wannier orbitals; see, e.g.,. 7,8,42,43 Alternative approaches were introduced by Shukla et al 11,50 and Malrieu et al, 40 who carried out the ground-state HF calculation in real rather than reciprocal space and obtained directly localized orbitals.…”
Section: Introductionmentioning
confidence: 99%
“…4,5,6,7,8,9,10,11,12,13,14,15,16,17 DFT is strictly speaking a ground-state theory. Nevertheless the eigenvalues of the Kohn-Sham (KS) equations have been interpreted as the electronic energy bands.…”
Section: Introductionmentioning
confidence: 99%
“…The electron correlation problem is addressed in these schemes either by secondorder Møller-Plesset theory (MP2) 4,5,6,38,39,40 or coupledelectron-pair and coupled cluster methods. 7,8,9 By realizing that the correlation hole of an added electron or hole is a local object, use can be made of local operators. 27,28 The latter are most naturally associated with a set of real-space, localized Wannier orbitals (WO's).…”
We present a systematic study of the correlation-induced corrections to the electronic band structure of zinc-blende BN. Our investigation employs an ab initio wave-function-based local Hamiltonian formalism which offers a rigorous approach to the calculation of the polarization and local charge redistribution effects around an extra electron or hole placed into the conduction or valence bands of semiconducting and insulating materials. Moreover, electron correlations beyond relaxation and polarization can be readily incorporated. The electron correlation treatment is performed on finite clusters. In conducting our study, we make use of localized Wannier functions and embedding potentials derived explicitly from prior periodic Hartree-Fock calculations. The on-site and nearest-neighbor charge relaxation bring corrections of several eV to the Hartree-Fock band gap. Additional corrections are caused by long-range polarization effects. In contrast, the dispersion of the Hartree-Fock bands is marginally affected by electron correlations. Our final result for the fundamental gap of zinc-blende BN compares well with that derived from soft x-ray experiments at the B and N K-edges.
“…͑The van der Waals interactions are not included in the total QM/MM Fock or KS matrix, but into the total energy.͒ On the other hand, we have also seen significant development based on a fully QM description for large-scale calculations. [6][7][8][9][10][11][12][13][14][15][16][17][18] One of the authors ͑W.Y.͒ has developed the linear-scaling treatment, the divide-and-conquer ͑DC͒ method. [26][27][28] In this method, the entire system is first divided into several subsystems and their electron densities are calculated separately.…”
Section: Introductionmentioning
confidence: 99%
“…In this subject, many methods have been proposed so far. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The most well-known and commonly used approach is the quantum-mechanical/molecularmechanical ͑QM/MM͒ method. [19][20][21][22] In this method, the electronically important part is described by quantum mechanics ͑QM͒, while the rest of the system is described by molecular mechanics ͑MM͒.…”
A density-fragment interaction ͑DFI͒ approach for large-scale calculations is proposed. The DFI scheme describes electron density interaction between many quantum-mechanical ͑QM͒ fragments, which overcomes errors in electrostatic interactions with the fixed point-charge description in the conventional quantum-mechanical/molecular-mechanical ͑QM/MM͒ method. A self-consistent method, which is a mean-field treatment of the QM fragment interactions, was adopted to include equally the electron density interactions between the QM fragments. As a result, this method enables the evaluation of the polarization effects of the solvent and the protein surroundings. This method was combined with not only density functional theory ͑DFT͒ but also time-dependent DFT. In order to evaluate the solvent polarization effects in the DFI-QM/MM method, we have applied it to the excited states of the magnesium-sensitive dye, KMG-20. The DFI-QM/MM method succeeds in including solvent polarization effects and predicting accurately the spectral shift caused by Mg 2+ binding.
71.15.Qe; 71.20.Ps Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday Two basic methods to assess correlation effects on an ab initio level for excited states in semiconductors and insulators are presented. The construction of an effective Hamiltonian and a Green's function approach are described. Both methods are based on a local description of the correlation effects, using Wannier-type Hartree-Fock orbitals as a starting point. Numerical efficiency is derived from the combination of the correlation methods with a general incremental scheme, which allows to focus on the important correlation contributions and arranges them in rapidly converging series. This scheme also gives a guideline to the economic use of suitable approximations for different contributions. The methods suggested lead to systematically improvable numerical results. Their feasibility is demonstrated in applications to the valence bands of Si and C and the band structures of the ionic crystals LiH and LiF. A good overall agreement with experiments is achieved.
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