Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko, I. V.; Ryndin, E. A.

doi:10.3390/electronics5030052

Cited by 13 publications

(12 citation statements)

References 49 publications

(68 reference statements)

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“…Carrier mobilities, and generation and recombination rates for the next instant are estimated after the solution of the Poisson's equation at the actual moment of time. In paper [21] we showed that the application of Gummel's method together with the explicit and upwind difference schemes allows for the reduction in consumption of computational resources, but requires a shorter time step than other approaches.…”

Section: Explicit Techniquementioning

confidence: 99%

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Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.

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Section: Explicit Techniquementioning

confidence: 99%

“…The following Dirichlet boundary conditions for Equations (1)-(6) are applied at ohmic and Schottky contacts in the case of fixed voltage mode [21]:…”

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Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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“…This drift is given by the transit time of the photogenerated electrons and holes across the depletion layer and is given by 23

τ_{tr} = \frac{W}{{bold-italicV}_{bold-italicd}}

where W is the width of the depletion layer, and V d denotes the drift velocity of the charge carriers. The drift velocity is given by 24

V_{d} = μ E

where μ denotes the carrier mobility, and E is the incident electric field on the PD.…”

Section: Simulation Resultsmentioning

confidence: 99%

Terahertz signal generation based on a microwave photonic system with add‐drop microring resonator

Katti

Prince

2020

Micro & Optical Tech Letters

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A microwave photonic system based on a silicon add‐drop microring resonator is proposed and analyzed in simulation environment. It is observed that when a pulsed laser source (PLS) of repetition rate of 100 Gbps is fed to input port of MRR and a PLS with repetition rate of 50 Gbps is fed at the add port of the MRR, THz signals in the frequency band of 0.1‐1.5 THz are generated with a spacing of 0.05 THz. The power of the highest frequency component (1.5 THz) is ‐65.1 dBm when the pulse width of PLS is 0.1 ps. This generation of THz signals is a result of interference between two optical signals of different repetition rates which are evanescently coupled into the ring cavity at the input ports of MRR. It is found that power of THz signal is higher when the pulse width of PLS is smaller.

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“…Drift-diffusion numerical simulation of conventional on-chip p-i-n, Schottky barrier and uni-travelling carrier (UTC) photodetectors demonstrated that their response time is restricted by semiclassical transport effects in A III B V semiconductor materials and exceeds several picoseconds for the most efficient structures [17,[19][20][21]. Such performance is not sufficient for the adequate detection of short optical pulses generated by the lasers-modulators.…”

Section: Introductionmentioning

confidence: 99%

Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation

Pisarenko

Ryndin

2020

Photonics

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Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response time and sufficient sensitivity are required. In this paper, we introduce the concept of a novel high-speed photodetector with controlled relocation of carrier density peaks. The device includes a traditional p-i-n photosensitive junction and an orthogonally oriented control heterostructure. The transverse electric field displaces the peaks of electron and hole densities into the regions with low carrier mobilities and lifetimes during the back edge of an optical pulse. This relocation results in the fast decline of photocurrent that does not depend on the longitudinal transport of electrons and holes. We develop a combined numerical model based on the Schrodinger-Poisson equation system to estimate the response time of the photodetector. According to the simulation results, the steep part of the photocurrent back edge has a duration of about 0.1 ps.

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Cited by 13 publications

References 49 publications

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Terahertz signal generation based on a microwave photonic system with add‐drop microring resonator

Photodetector with Controlled Relocation of Carrier Density Peaks: Concept and Numerical Simulation

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