Numerical investigation of graphene and 2D‐MoS ₂ facilitated perovskite/silicon “p‐i‐n” structure for solar cell application

Abstract

Summary Using AFORS‐HET v2.5 solar cell simulation software, four “p‐i‐n” structures configured as graphene/n‐MoS2/perovskite/p‐cSi/Au (perovskite: MAPbI3, MAPbI3−xClx, MASnI3, and FASnI3; p‐cSi=p‐type crystalline silicon) have been investigated for an efficient solar cell application. In these structures, graphene and 2D n‐type molybdenum disulfide (n‐MoS2) have been used as a front contact and an emitter layer, respectively. By optimizing the various parameters of graphene, n‐MoS2, perovskite materials, and p‐cSi, the highest power conversion efficiency (η) of 25.75% with VOC = 689.8 mV, JSC = 46.35 mA/cm2, and FF = 80.53% have been achieved for graphene/n‐MoS2/MAPbI3−x Clx/p‐cSi/Au structure. Further, to study the effect of the thickness of MAPbI3−x Clx on cell performance, the thickness has been changed from 100 to 20 nm. The maximum efficiency of 26.65% has been obtained at the thickness of 20 nm. This study provides a route for the application of graphene as front contact, n‐MoS2 as an emitter layer in MAPbI3−x/p‐cSi based “p‐i‐n” structure for solar cell application to obtain higher efficiency.