Numerical investigation of the effect of shape change in graphite crucible during top-seeded solution growth of SiC

Mukaiyama, Yuji; Iizuka, Masaya; Vorob'ev, A. N.; Kalaev, V.V.

doi:10.1016/j.jcrysgro.2017.06.006

Cited by 13 publications

(6 citation statements)

References 15 publications

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“…The temperature distribution and flow are affected by the geometry changes due to crystallization of the seed and etching of the graphite crucible during growth. Mukaiyama [139] numerically predicted the shape change of the crucible. The growth rate of final stage was approximately 1.7 time higher than the initial stage when the bottom corner parts of graphite crucible were severely etched, while dissolved carbon was mostly deposited on the top wall.…”

Section: Structure Of Graphite Componentsmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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The third-generation semiconductor silicon carbide (SiC) has the characteristics of the wide band gap, high electric breakdown voltage, large saturated drift velocity, and high thermal conductivity, which are favorable for power devices under high-voltage, high temperature, and high-frequency scenarios [1,2] . Automotive applications are expected to remain a primary market for SiC power segments since they are one of the main drivers of the total power electronics market. The overall market for SiC devices is expected to exceed US$2.5 billion by 2025, with a compound annual

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Section: Structure Of Graphite Componentsmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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“…[5,6,26] The CFD simulation was performed on a 2D steady-axisymmetric model by taking into account the heat transport, mass transport, and convection using CGSim software. [27] The temperatures inside the seed shaft (T), the rotation speeds of the seed shaft (𝜔 s ) and crucible (𝜔 c ), and the position of the crucible (z) were set as variable parameters.…”

Section: Cfd Simulationmentioning

confidence: 99%

Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC

Isono

Harada

Kutsukake

et al. 2022

Advcd Theory and Sims

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The macroscopic distribution of fluid flows, which affect the quality of final products for various kinds of materials, is often difficult to describe in mathematical formulae and hinders the implementation of empirical knowledge in scaling up. In the present study, the characteristics of the flow distribution in silicon carbide (SiC) solution growth are described by using the position of the saddle point and the solution growth conditions are optimized by computational fluid dynamics simulation, machine learning, and a genetic algorithm. As a result, the candidates of the optimal condition for the solution growth of 6-in. SiC crystals are successfully obtained from the empirical knowledge gained from 3-in. crystal growth, by adding the topological description to the objective function. The present design of the objective function using the topological description can possibly be applied to other crystal growth or materials processing problems and to overcome scale-up difficulties, which can facilitate the rapid development of functional materials such as SiC wafers for power device applications. . IntroductionFluid flow that arises in many materials processing techniques, such as crystal growth, casting, thin film fabrication, and polymer processing, is critical to the quality and characteristics of the final product and optimization of the system. [1] Recent advances in computational fluid dynamics (CFD) aid in the design of suitable conditions for materials processing. [2] Furthermore, the

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“…15 Mukaiyama et al revealed the impact of crucible shape changes on heat transfer, solution flow, mass transport, and growth rate during the seed crystal growth process. 16 Yamamoto et al discovered that surface force and electromagnetic force play a crucial role in driving solution flow, while Marangoni convection can induce a deceleration in growth rate. Additionally, surface deformation has a negligible impact on temperature distribution, growth rate, and transport structures of the solution.…”

Section: Introductionmentioning

confidence: 99%