Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

Kim, S. S.; Hamaguchi, Satoshi; Yoon, N. S.; Chang, C. S.; Lee, Y. D.; Ku, S.

doi:10.1063/1.1350671

Cited by 14 publications

(8 citation statements)

References 39 publications

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“…To reduce the computing resources and compare the our results with the two-dimensional fluid model, we also use a simple circuit model based on the previously developed model. 4,11,25 The schematic diagram of an equivalent circuit is described in Fig. 3.…”

Section: Voltage Control Model (Model Ii)mentioning

confidence: 99%

“…Inductively coupled plasma (ICP) sources are widely used in semiconductor fabrication processing because a high density plasma with good uniformity is easily obtained under low pressure without an external magnetic field. [1][2][3][4] Moreover, compared to other reactors (Helicon, ECR, etc. ), the ICP reactor can be easily scaled up to accommodate a large wafer size because the system is substantially simpler.…”

Section: Introductionmentioning

confidence: 99%

“…Assuming the sinusoidal voltage source, we also use a simple circuit model based on the previously developed model. Kim et al 4 determined the dc self-bias by using a circuit model 25 from the plasma parameters. They regarded sheaths on the chamber wall and biased substrate as capacitors, and the capacitors are connected in series through plasma.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A self-consistent global model of solenoidal-type inductively coupled plasma discharges including the effects of radio-frequency bias power

Kwon

Chang

Park

et al. 2011

Journal of Applied Physics

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We developed a self-consistent global simulator of solenoidal-type inductively coupled plasma discharges and observed the effect of the radio-frequency (rf) bias power on the plasma density and the electron temperature. We numerically solved a set of spatially averaged fluid equations for charged particles, neutrals, and radicals. Absorbed power by electrons is determined by using an analytic electron heating model including the anomalous skin effect. To analyze the effects of rf bias power on the plasma properties, our model also combines the electron heating and global transport modules with an rf sheath module in a self-consistent manner. The simulation results are compared with numerical results by using the commercial software package CFD-ACE þ (ESI group) and experimental measurements by using a wave cutoff probe and a single Langmuir probe. V

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Section: Voltage Control Model (Model Ii)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A self-consistent global model of solenoidal-type inductively coupled plasma discharges including the effects of radio-frequency bias power

Kwon

Chang

Park

et al. 2011

Journal of Applied Physics

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“…In order to numerically analyze the plasma sources, various numerical methods have been used such as kinetic, fluid, and hybrid methods. Among them, the fluid model has been widely used to obtain the spatial and temporal profiles of plasma parameters inside chambers for low-temperature and high-density plasma sources [1][2][3][4][5]. In particular, fluid models encompass more chemical reactions in the bulk plasma than the kinetic models [6,7].…”

Section: Introductionmentioning

confidence: 99%

Spatially averaged ion temperature model for low-temperature plasma sources

Kwon¹,

Yook²,

Chung³

et al. 2022

J. Phys. D: Appl. Phys.

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Although the ion temperature can considerably affect bulk plasma parameters and ion angle distribution functions arriving at the substrate, limited experiments have been conducted on this phenomenon because ion temperature measurement is difficult. Furthermore, only a few simulations have been performed under specific conditions. Therefore, in this study, a novel method was developed to calculate the ion temperature using a global model. The spatially averaged ion temperature equation was derived by integrating the ion temperature over space. Continuity and electron temperature equations were used in a self-consistent manner to solve the equation. We investigated radio-frequency inductively coupled Ar, N2, and Cl2 discharges in the pressure range of 5–20 mTorr and power range of 200–1000 W. The obtained results were highly consistent with experimental and two-dimensional simulation results.

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“…For the typical ICP discharges, the time step cannot be larger than the dielectric relaxation time, which is about 10 −13 sec. There are several methods to overcome this restriction [5,6,7,8].…”

mentioning

confidence: 99%

A comparative study of algorithm for fluid simulation of high density plasma discharges

Oh¹,

Lee²,

Jeon³

et al. 2014

AIP Conference Proceedings

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A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films Abstract.A new algorithm for steady-state fluid simulation of high density, low temperature plasma discharge is suggested. The restriction on simulation time step and a new method to overcome it is discussed. For a comparison of the new method with a previous other method, a one-dimensional fluid simulation of inductively coupled plasma discharge is studied.

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Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

Abstract: Noncollisional heating and electron energy distributions in magnetically enhanced inductively coupled and helicon plasma sources

Cited by 14 publications

References 39 publications

A self-consistent global model of solenoidal-type inductively coupled plasma discharges including the effects of radio-frequency bias power

A self-consistent global model of solenoidal-type inductively coupled plasma discharges including the effects of radio-frequency bias power

Spatially averaged ion temperature model for low-temperature plasma sources

A comparative study of algorithm for fluid simulation of high density plasma discharges

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