Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS₂ thin film solar cell

Abstract

This paper presents the modeling and numerical inspection of an efficient CuInS2-based n-CdS/p-CuInS2/p+-ZnTe thin film solar cell applying the SCAPS-1D simulator. The various parameters used in the simulation have been obtained from existing literature. The optimization of the device has considered the width, doping concentration, and defect density of individual layer. The optimized standalone CuInS2 device shows an efficiency of 16.83%. Addition of ZnTe in the device gives an impressive efficiency of approximately 28.67%, having a current density, JSC of 25.58 mA/cm2, a VOC of 1.25 V, and an FF of 89.12%. The superior VOC is a result of the increased built-in potential formed at the hetero-interfaces of the device and the decrease in surface recombination velocity by back surface field effect in the ZnTe layer. The highest JSC is ascribed to the enhancement of the absorption of vis-infrared photons by back surface field (BSF) effect in the ZnTe layer. These findings demonstrate the potential for manufacturing high efficiency CuInS2-based thin film solar cells in the future.

Design and simulation of a high performance Ag3CuS2 jalpaite-based photodetector

“…V OC downfalls quickly by the rise in recombination current [ 59 ]. This phenomenon of the V OC takes place due to the minority carrier lifetime and diffusion length are higher in this range of defect in the Ag 3 CuS 2 PD [ 60 ]. Although photocurrent manifests a constant nature in the entire range of defect densities, the device voltage degrades successively as observed in the figure.…”

A theoretical analysis to reveal the prospects of MoS2 as a back surface field layer in TiS3-based near infrared photodetector

“…This is occured due to the fact that the minority carrier lifetime and diffusion length are comparatively substantial about the thicknesses of this layer. Consequently, the recombination of carriers within the layer has a negligible impact on the overall functionality of the device [54].…”

“…This phenomenon arises because the minority carrier lifetime and diffusion length are notably large when compared to the thickness of the layer in question. As a result, the recombination of carriers within this layer has minimal influence on the overall performance of the device [54].…”

“…These results are occurred due to the fact that carrier recombination by localized energy levels do not significantly affect within these defect range in ZrS 2 and MoS 2 layers as the carrier lifetime and diffusion length in these layers are sufficiently high and therefore the performance of the photodetector remains constant [54]. Therefore, the defect density for both of the MoS 2 and ZrS 2 layers are set as 10 15 cm −3 in the optimum heterostructure photodetector.…”