2005
DOI: 10.2494/photopolymer.18.587
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Numerical Investigations on Requirements for BARC Materials for Hyper NA Immersion Lithography

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Cited by 2 publications
(4 citation statements)
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“…For the optimizations of BARC parameters, we have already shown that there is essentially no dependence of optimized values on the presence or absence of top-coat layer and the thickness of photoresist layer 11 . For example, for the case of optimizations of BARC parameters on silicon substrate, variation of optimized complex index of refraction and thickness at various photoresist thicknesses (10 -300 nm) was less than 1.5 % and 3 %, respectively, meaning that the optimizations of BARC parameters can be done independently from the thickness of photoresist layer.…”
Section: Calculationsmentioning
confidence: 97%
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“…For the optimizations of BARC parameters, we have already shown that there is essentially no dependence of optimized values on the presence or absence of top-coat layer and the thickness of photoresist layer 11 . For example, for the case of optimizations of BARC parameters on silicon substrate, variation of optimized complex index of refraction and thickness at various photoresist thicknesses (10 -300 nm) was less than 1.5 % and 3 %, respectively, meaning that the optimizations of BARC parameters can be done independently from the thickness of photoresist layer.…”
Section: Calculationsmentioning
confidence: 97%
“…Figure 1 and 2 show some selected results of this optimizations, where only the results with the thickness of the silicon oxide and nitride layer being 50 nm, 100 nm, 150 nm and 200 nm are shown. For the purpose of comparison, we also show in Figure 1 and 2 the results of the optimizations on a silicon substrate that we reported previously 11 .…”
Section: Optimizations Of Dual-barc Parametersmentioning
confidence: 98%
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