Numerical method for thermal donors formation simulation during silicon Czochralski growth

Chatelain, Marc; Albaric, Mickaël; Pelletier, Dominique; Veirman, Jordi; Letty, Elénore

doi:10.1016/j.solmat.2020.110785

Cited by 10 publications

(6 citation statements)

References 20 publications

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“…[ 21–24 ] The discrepancy becomes smaller as g increases, consistent with the known distribution of oxygen and thermal donors in Cz‐Si ingots. [ 21 ]…”

Section: Resultssupporting

confidence: 58%

“…[21][22][23][24] The discrepancy becomes smaller as g increases, consistent with the known distribution of oxygen and thermal donors in Cz-Si ingots. [21] There are uncertainties associated with the solidified fractions of the wafers, particularly for the wafers from the tail end of the ingot, due to an unknown amount of silicon melt remaining in the crucible after ingot growth, as well as an unknown proportion of the discarded tail section of the ingot prior to wafering. Consequently, the g values of the tail wafers (g ≥ 0.8) were estimated based on the extrapolated Scheil's fitting to the measured N D data below g < 0.8 and the reported P segregation coefficient of 0.35 in Si.…”

Section: Dopant Concentration and Scheil Fittingsupporting

confidence: 63%

“…[20] The discrepancy in N D values before and after gettering, in the seed and middle part of the ingot (g < 0.6), clearly indicates the presence of thermal donors in the as-cut wafers, which is a well-known effect in Cz-Si. [21][22][23][24] The discrepancy becomes smaller as g increases, consistent with the known distribution of oxygen and thermal donors in Cz-Si ingots. [21] There are uncertainties associated with the solidified fractions of the wafers, particularly for the wafers from the tail end of the ingot, due to an unknown amount of silicon melt remaining in the crucible after ingot growth, as well as an unknown proportion of the discarded tail section of the ingot prior to wafering.…”

Section: Dopant Concentration and Scheil Fittingsupporting

confidence: 63%

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Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

Le,

Cai,

Yang

et al. 2023

Solar RRL

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An assessment of the bulk material quality of industrial Czochralski (Cz) grown phosphorus‐doped n‐type silicon (Si) wafers along an ingot is reported. The minority charge carrier lifetimes of the Cz‐Si wafer bulk before and after phosphorous (POCl3) diffusion gettering are assessed, by applying room‐temperature superacid surface passivation to avoid any additional gettering or hydrogenation effect. A substantial increase in the bulk lifetime of all of the n‐type Cz‐Si wafers along the ingot is observed, indicating the effectiveness of a gettering step for such wafers and the presence of getterable metallic impurities in these wafers. By experimentally monitoring the lifetime changes upon a gettering anneal and simulating the gettering kinetics based on different metal diffusivities, iron is identified to be a limiting defect, at least for the wafers from the tail part of the ingot. A dissolved iron concentration of is estimated from the bulk lifetimes of the tail wafers. This lifetime kinetics approach is also a demonstration of a new method to identify iron, or other getterable metals with moderate diffusivities such as chromium, in n‐type silicon wafers.

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“…[ 21–24 ] The discrepancy becomes smaller as g increases, consistent with the known distribution of oxygen and thermal donors in Cz‐Si ingots. [ 21 ]…”

Section: Resultssupporting

confidence: 58%

Section: Dopant Concentration and Scheil Fittingsupporting

confidence: 63%

Section: Dopant Concentration and Scheil Fittingsupporting

confidence: 63%

See 1 more Smart Citation

Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

Le,

Cai,

Yang

et al. 2023

Solar RRL

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show abstract

“…[121][122][123] Additionally, unwanted oxygen in the wafer can form oxygen precipitates or thermal donors when processed at elevated temperatures. 111,124 These defects appear as circular rings and can manifest in both p-type and n-type wafers. 125 Metallic impurities, such as iron, copper, chromium and aluminium can also be incorporated into the wafer during manufacturing.…”

Section: Silicon Wafer Typementioning

confidence: 99%

Design considerations for the bottom cell in perovskite/silicon tandems: a terawatt scalability perspective

Wright,

Vicari Stefani,

Jones

et al. 2023

Energy Environ. Sci.

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“…[ 52 ] Thermal donors are recombination‐active defects thought to be formed via the aggregation of silicon and interstitial oxygen atoms. [ 53,54 ] The formation of thermal donors varies as a function of thermal history, with peak formation rates reported to occur at ≈470 °C, [ 55 ] although a wide window of temperatures can lead to the formation of these defects. The formation of thermal donors in n‐type wafers can have a significant negative impact on efficiency.…”

Section: Defect Engineering Approachesmentioning

confidence: 99%

Progress with Defect Engineering in Silicon Heterojunction Solar Cells

Wright

Stefani

Soeriyadi

et al. 2021

Physica Rapid Research Ltrs

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Silicon heterojunction (SHJ) solar cells are formed by the deposition of stacks of intrinsic and doped hydrogenated amorphous silicon layers (a-Si:H) on the surface of crystalline silicon (c-Si) wafers. [1][2][3] The doped a-Si:H layers determine the carrier selectivity of each contact, which defines the direction of current flow, and the intrinsic a-Si:H layers, which are deposited directly onto the crystalline silicon (c-Si) surface, provide excellent surface passivation. [4,5] The cells are completed by the deposition of a transparent conducting oxide (TCO) to aid lateral conduction and the formation of metal contacts, typically by screen printing of silver. [6][7][8] This technology was pioneered in the 1990s by Japanese company Sanyo. [9][10][11] The solar photovoltaics (PV) market is currently dominated by the passivated emitter and rear cell (PERC) design. [12,13] Compared to PERC, SHJ solar cells have multiple advantages. They have demonstrated higher open circuit voltages (V OC ), with V OC values as high as 750 mV. [9] The high V OC is related to the excellent surface passivation provided by the a-Si:H layers. The world record 1 sun efficiency of 26.7% for a single-junction silicon solar cell was achieved using this approach, [14] and cells with efficiency exceeding 25% have been fabricated in an industrial environment. [15] Another advantage of SHJ cells, which is linked to the high V OC , is the lower temperature coefficient, meaning that power losses in SHJ cells operated at elevated temperatures are lower than in other siliconbased technologies. [2,16] Therefore, under realistic cell-operation conditions in the field, the actual power output of an SHJ module will be higher than that of a PERC module, even if they have the same power rating at room temperature. In addition, the expected rise of tandem solar cells with silicon as the bottom cell has also increased interest in the SHJ technology, as it is well suited as the bottom cell in a tandem device. [17][18][19][20][21][22] These advantages mean that industry is seriously looking into SHJ solar cells as a technology to compete with PERC in the future. The ITRPV 11th edition indicates that the market share for SHJ cells is expected to increase to 15% over the next ten years [23] which will represent a significant volume as we move toward terawatt-scale photovoltaics. [24] One unique aspect of SHJ cells is that all processing occurs in a low-temperature regime, typically <250 C. [4,16,25] This is very different to most other cell architectures, such as aluminium

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Numerical method for thermal donors formation simulation during silicon Czochralski growth

Cited by 10 publications

References 20 publications

Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

Design considerations for the bottom cell in perovskite/silicon tandems: a terawatt scalability perspective

Progress with Defect Engineering in Silicon Heterojunction Solar Cells

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