Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet

Yang, Won-Kyun; Joo, Ji Bong

doi:10.5757/asct.2014.23.3.139

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2017

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“…InGaN ternary compounds have excellent properties including a tunable direct bandgap between 0.7 eV (InN) and 3.4 eV (GaN) [1,2,3,4]. In particular, the InGaN/GaN multiple quantum well (MQW) structure plays a key role in the field of optoelectric devices such as light emitting diodes or laser diodes.…”

Section: Introductionmentioning

confidence: 99%

Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

Woo

Kim

Cho

et al. 2017

Appl. Sci. Converg. Technol.

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An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

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Section: Introductionmentioning

confidence: 99%