Neuromorphic computing
is an emerging area with prospects to break
the energy efficiency bottleneck of artificial intelligence (AI).
A crucial challenge for neuromorphic computing is understanding the
working principles of artificial synaptic devices. As an emerging
class of synaptic devices, organic electrochemical transistors (OECTs)
have attracted significant interest due to ultralow voltage operation,
analog conductance tuning, mechanical flexibility, and biocompatibility.
However, little work has been focused on the first-principal modeling
of the synaptic behaviors of OECTs. The simulation of OECT synaptic
behaviors is of great importance to understanding the OECT working
principles as neuromorphic devices and optimizing ultralow power consumption
neuromorphic computing devices. Here, we develop a two-dimensional
transient drift–diffusion model based on modified Shockley
equations for poly(3,4-ethylenedioxythiophene) (PEDOT)-based OECTs.
We reproduced the typical transistor characteristics of these OECTs
including the unique non-monotonic transconductance–gate bias
curve and frequency dependency of transconductance. Furthermore, typical
synaptic phenomena, such as excitatory/inhibitory postsynaptic current
(EPSC/IPSC), paired-pulse facilitation/depression (PPF/PPD), and short-term
plasticity (STP), are also demonstrated. This work is crucial in guiding
the experimental exploration of neuromorphic computing devices and
has the potential to serve as a platform for future OECT device simulation
based on a wide range of semiconducting materials.