Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness

Amin, Nowshad; Sopian, Kamaruzzaman; Konagai, Makoto

doi:10.1016/j.solmat.2007.04.006

Cited by 193 publications

(99 citation statements)

References 5 publications

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“…In recent years, extensive research has been done on a preparation and characterization of CdS thin films due to the promising applications in photovoltaic solar cells such as CdTe [1], CZTS [2], and CIGS [3]. CdS is the n-type semiconductor with a direct optical band gap of around 2.45 eV, which is used as a window layer in solar cells.…”

Section: Introductionmentioning

confidence: 99%

Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

et al. 2016

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Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500°C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500°C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

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Section: Introductionmentioning

confidence: 99%

Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

et al. 2016

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“…Meanwhile, consideration of the absorbance becomes particularly relevant in connection with the desire to reduce the thickness of the absorber layer in CdS/CdTe solar modules, i.e. to develop the devices with ultra-thin CdTe layer [37][38][39][40][41]. In this case, the optical losses in the absorber layer can be significant.…”

Section: Effect Of Optical Losses On Short-circuit Currentmentioning

confidence: 99%

Possibilities to decrease the absorber thickness reducing optical and recombination losses in CdS/CdTe solar cells

Kosyachenko

2013

Mater Renew Sustain Energy

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Based on the optical constants, calculations of optical losses in CdS/CdTe solar cells have been carried out taking into account reflections at the interfaces and absorption in the TCO and CdS layers. It has been shown that the losses caused by reflections at the interfaces result in lowering the short-circuit current by *9 %, whereas absorption in the TCO and CdS layers with the typical thicknesses lead to losses of 15-24 %. Calculations of the integrated absorptive capacity of CdTe layer taking into account the spectral distributions of the standard AM1.5 solar radiation and the absorption coefficient of CdTe have been carried out. It is shown that in CdTe, the almost complete absorption of photons (C99.9 %) in the hv [ E g range is observed at a layer thickness of more than 20-30 lm, and the absorptive capacity of photons in a CdTe layer of thickness 1 lm is about 93 %. Based on the continuity equation and taking into account the recombination at the front and rear surfaces of the CdTe layer as well as in the space charge region, the restrictions imposed on the thickness of the absorber layer in CdS/CdTe heterojunction are studied. In all cases, along with the mobilities and lifetimes of charge carriers, the concentration of uncompensated impurities in CdTe plays a key role in the generation of photocurrent. When the CdTe absorber layer is thin (\1 lm), it is impossible to avoid a noticeable decrease of the short-circuit current density. The losses of the short-circuit current are equal to 19-20 % when the thickness of the CdTe layer is 0.5 lm whereas only 5 % for a typical thickness of 2-3 lm.

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“…In recent years, extensive research has been carried out on the area of preparation and characterization of CdS thin films due to its application in different type of most promising photovoltaic solar cells such as CdTe [4], CZTS [5] and CIGS [6].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of CDS Films by Analysis of Spectral Transmittance

Aristizábal¹,

Mikan²

2016

IOSR

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Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness

Cited by 193 publications

References 5 publications

Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

Possibilities to decrease the absorber thickness reducing optical and recombination losses in CdS/CdTe solar cells

Optical Properties of CDS Films by Analysis of Spectral Transmittance

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