“…For the device optimization, all the requisite device parameters and defect parameters for simulation work have been adopted (Tables S1–S4, Supporting Information) from existing literature for each layer as follows FTO, [ 19–22 ] GO, [ 23,24 ] Cs 2 SnI 6 , [ 25,26 ] Spiro‐OMeTAD, [ 27–30 ] CuSCN, [ 31,32 ] PTAA, [ 33,34 ] PEDOT:PSS, [ 35,36 ] NiO, [ 37,38 ] CuO, [ 39,40 ] CuI, [ 41,42 ] CuSbS 2 , [ 43–46 ] and Au (work function of 5.1 eV). [ 47 ]…”