Numerical modeling of hole interband tunneling in wurtzite GaN and SiC

Nilsson, Hans‐Erik; Martı́nez, Antonio; Ghillino, Enrico; Sannemo, Ulf; Bellotti, E.; Goano, Michele

doi:10.1063/1.1388169

Cited by 15 publications

(8 citation statements)

References 17 publications

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“…We have found that, although this technique provides a reasonable first order formulation of the problem, particularly for transport in the c-axis direction of 4H-SiC, a more accurate description is obtained using an approach based on the time development of the probability amplitude of a Bloch electron moving in the presence of a uniform electric field. [22][23][24][25] The basis of this approach is the work of Krieger and Iafrate. 22 For simplicity, we refer to this approach as the KI model.…”

Section: Drift Modelmentioning

confidence: 99%

Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

Hjelm

Nilsson

Martı́nez

et al. 2003

Journal of Applied Physics

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High field density-functional-theory based Monte Carlo: 4 H -SiC impact ionization and velocity saturationA full-band ensemble Monte Carlo simulation has been used to study the high-field carrier transport properties of 4H-SiC. The complicated band structure of 4H-SiC requires the consideration of band-to-band tunneling at high electric fields. We have used two models for the band-to-band tunneling; one is based on the overlap test and the other on the solution of the multiband Schrödinger equations. The latter simulations have only been performed for holes in the c-axis direction, since the computer capacity requirement are exceedingly high. Impact-ionization transition rates and phonon scattering rates have been calculated numerically directly from the full band structure. Coupling constants for the phonon interaction have been deduced by fitting of the simulated low-field mobility as a function of lattice temperature to experimental data. Secondary hot electrons generated as a consequence of hole-initiated impact ionization are considered in the study for both models of band-to-band tunneling. When the multiband Schrödinger equation model is used for holes in the c-axis direction, a significant change in the electron energy distribution is found, since the hole impact-ionization rate is very much increased with this model. The secondary electrons increase the average energy of the electron distribution leading to a significant increase in the electron-initiated impact-ionization coefficients. Our simulation results clearly show that both electrons and holes have to be considered in order to understand electron-initiated impact ionization in 4H-SiC.

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Section: Drift Modelmentioning

confidence: 99%

Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

Hjelm

Nilsson

Martı́nez

et al. 2003

Journal of Applied Physics

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“…This treatment, however, may not be correct when the band crossing or anticrossing exists. 29) Nilsson et al proposed a method to account for the bandto-band tunneling. 29) They employed a rigorous approach developed by Krieger and Iafrate (KI).…”

Section: Full-band Monte Carlo Simulationmentioning

confidence: 99%

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Miyazaki,

Tanaka,

Mori

2024

Jpn. J. Appl. Phys.

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The effects of strain on the carrier transport in GaN are investigated by using a full-band Monte Carlo method combined with an empirical tight-binding method. The impacts on the carrier mobility, carrier drift velocity, and breakdown characteristics are discussed. Compressive uniaxial or tensile biaxial strain will be beneficial for achieving higher hole mobility in vertical GaN devices due to the light hole band lifted above the heavy hole band. Analysis of the breakdown phenomena indicates that strain will not degrade the breakdown characteristics in terms of its effect on the band structure.

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“…Several approaches have been proposed to deal with this problem and their practical implementation is still under investigation. [19][20][21].…”

Section: Computational Modelmentioning

confidence: 98%

Computational electronics of wide-bandgap semiconductors

Bellotti

2003

SPIE Proceedings

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In this paper some relevant aspects of the computational electronics of wide band gap semiconductors are discussed. The most important modelling differences and challenges that make wide band gap semiconductors more complex to study than conventional cubic materials are considered. The model used to compute the bulk transport properties of wurtzite phase GaN is presented as an example. In particular, the negative differential mobility effect and the velocity overshoot are discussed. It is found that the negative differential mobility results from a two-step process. The non-parabolicity of the Γ valley is responsible for the onset of the negative differential mobility phenomena and the transfer to higher energy region of the Brillouin zone makes a contributions only after the process has already initiated.

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Numerical modeling of hole interband tunneling in wurtzite GaN and SiC

Cited by 15 publications

References 17 publications

Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

Computational electronics of wide-bandgap semiconductors

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