2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)
DOI: 10.1109/icmel.2004.1314866
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Numerical modeling of silicon etching in CF/sub 4//O/sub 2/ plasma-chemical system

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Cited by 2 publications
(3 citation statements)
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“…In first turn some characteristic features of authors' numerical model of plasma etching process will be described. The numerical model was developed during several years with successive improving its adequacy and prognostic abilities step by step (Grigoryev & Gorobchuk, 1996;Grigoryev & Gorobchuk, 1997;Grigoryev & Gorobchuk, 1998;Shokin et al, 1999;Grigoryev & Gorobchuk, 2004;Grigoryev & Gorobchuk, 2007;Grigoryev & Gorobchuk, 2008). Today the created model corresponds completely to the world standards in mathematical modelling of plasma reactors and includes some novel elements.…”
Section: Numerical Model Formulationmentioning
confidence: 99%
“…In first turn some characteristic features of authors' numerical model of plasma etching process will be described. The numerical model was developed during several years with successive improving its adequacy and prognostic abilities step by step (Grigoryev & Gorobchuk, 1996;Grigoryev & Gorobchuk, 1997;Grigoryev & Gorobchuk, 1998;Shokin et al, 1999;Grigoryev & Gorobchuk, 2004;Grigoryev & Gorobchuk, 2007;Grigoryev & Gorobchuk, 2008). Today the created model corresponds completely to the world standards in mathematical modelling of plasma reactors and includes some novel elements.…”
Section: Numerical Model Formulationmentioning
confidence: 99%
“…The numerical model was developed during several years with successive improving its adequacy and prognostic abilities step by step (Grigoryev & Gorobchuk, 1996;Grigoryev & Gorobchuk, 1997;Grigoryev & Gorobchuk, 1998;Shokin et al, 1999;Grigoryev & Gorobchuk, 2004;Grigoryev & Gorobchuk, 2007;Grigoryev & Gorobchuk, 2008). Today the created model corresponds completely to the world standards in mathematical modelling of plasma reactors and includes some novel elements.…”
Section: Numerical Model Formulationmentioning
confidence: 99%
“…In general case a binary mixture CF 4 /O 2 was considered as a parent gas because it is widely spread in silicon technology (Grigoryev & Gorobchuk, 2004;Grigoryev & Gorobchuk, 2007). An important difficulty for CF 4 /O 2 system is a simulation of plasma-chemical kinetics which is extraordinarily complicated.…”
Section: Physical-chemical Kinetics and Species Concentration Distribmentioning
confidence: 99%