Numerical modeling of the electrical properties plasma argon in a RF magnetron sputtering and with Einstein's relation of electron diffusivity

Ballah, Z.; Khelfaoui, F.

doi:10.1016/j.jksus.2018.09.004

Cited by 2 publications

(3 citation statements)

References 16 publications

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“…如图2(c)所示, 当直流电压V dc 为-100 V时, I n P r e s s Lisovsikiy等 [30] 研究低压条件下rf/dc复合电场驱 ) - 复. Lisovsikiy等 [30] 在低压条件下利用rf/dc电源驱动氮气, 研究结果表明: 在模式下, 当直流电压增大到一定值时, 放电终止, 随着直流电压的进一步增大, 放电得以恢复, 该实验结论与本文以上仿真计算分析得到的结论一致. [24] . 当V rf ≥V rf, min 时, 射频电源控制放电.…”

Section: 边界条件unclassified

One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure

Qi¹,

Tian²,

Wang³

et al. 2022

Acta Phys. Sin.

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We present the dielectric barrier discharge (DBD) mechanism of Argon (Ar) plasma driven by combined rf/dc voltage sources at atmospheric pressure, based on one-dimensional self-consistent coupled fluid model. Using finite element method (FEM) to numerically calculate the model, the average value of period average electron density varying with the average value of period average gas voltage in one rf period, and the variation of the minimum rf sustaining voltage were obtained under different dc voltages. In addition, the spatial-temporal distribution of the electron density and electron generation rate, the spatial distribution of electron temperature, and the time-domain variation of electron conduction current flowing to the dielectric were studied. Results show that the introduction of the dc voltage source has a significant effect on the rf discharge process of atmospheric pressure Ar, and the parameters of the plasma state are changed correspondingly. The discharge process is mainly controlled by the air gap voltage, and the dc voltage affects the gap voltage by changing the charge density on the dielectric surface. The minimum rf sustaining voltage Vrf,min first increases and then decreases with the increase of dc voltage. The amplitude of rf minimum sustaining discharge voltage is changed by the dc voltage. And when the amplitude are reached or exceeded, the discharge is controlled by the rf power supply. On one hand, at α mode, when the dc voltage is low, electrons are generated near the ground electrode. The electric field intensity in the ionization area is too small to maintain ionization. When the dc voltage is high, the sheath is formed, and electrons are generated at the rf sheath on both sides and the boundary of the plasma region. At γ mode, when the rf voltage amplitude is equal to or greater than the rf minimum sustain discharge voltage amplitude Vrf ≥ Vrf,min, the generation and distribution of electrons are almost unaffected by the dc voltage. On the other hand, at α mode, the ionization cannot be sustained for the low dc voltage, resulting in the failure to form the main plasma area. Therefore, the electron temperature is generally high. Due to the high electron density near the ground electrode, the electron temperature is higher. The electron density near the dielectric is less than that near the electrode, so the temperature is lower. When the dc voltage is getting larger, the sheath and the main plasma region are formed. The dc voltage significantly affects the electron temperature by controlling the sheath voltage and the length of the main plasma region. Finally, at α mode, the electron density near the medium is very low and the air gap voltage is negative for the low dc voltage. As a result, few electrons can reach the surface of the dielectric, and the conduction current of electrons flowing to the medium is very small. With the increase of the dc voltage, the electric field between air gaps increases, and electrons, being acted on by the electric field, flow from the dielectric surface. After the sheath formed, some speedy non-localization electrons that should have reached the dielectric surface are reflected back to the sheath, leading to a significant reduction in the number of electrons that can reach the dielectric surface.

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Section: 边界条件unclassified

One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure

Qi¹,

Tian²,

Wang³

et al. 2022

Acta Phys. Sin.

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“…An argon CRM predicts the population densities of particles in different states with the need of some parameters such as electron temperature, electron and ion densities and density of argon atoms in the plasma (pressure and temperature of the neutral gas). The average values of electron and ion densities, as well as the electron temperature calculated by Ballah et al [13,14], were used to apply the CRM in RF magnetron sputtering. Fig.…”

Section: The Effective Transition Probabilitymentioning

confidence: 99%

“…Fig. 1 -Scheme of the magnetron discharge geometry [13] Let H be the distance between electrodes and let R be the radius of each electrode; we also assume that R is much greater than H. The anode is located at z ~ 0 cm and the cathode is located at z ~ H  3 cm. The sputtering reactor is alimented by RF voltage with a frequency fRF  13.56 MHz, the voltage difference is 100 V and the magnetic field B at the cathode is 30 Gauss.…”

Section: The Effective Transition Probabilitymentioning

confidence: 99%

Spatial Distributions of 3p54s States of Argon Atoms in RF Magnetron Sputtering Plasma with a Collisional-Radiative Model

Azzaoui¹,

Khelfaoui²,

Ballah³

2021

J. Nano- Electron. Phys.

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Numerical modeling of the electrical properties plasma argon in a RF magnetron sputtering and with Einstein's relation of electron diffusivity

Cited by 2 publications

References 16 publications

One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure

One-dimensional simulation of Ar dielectric barrier discharge driven by combined rf/dc sources at atmospheric pressure

Spatial Distributions of 3p54s States of Argon Atoms in RF Magnetron Sputtering Plasma with a Collisional-Radiative Model

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