Numerical modelling and optimization of CdS/CdTe solar cell with incorporation of Cu2O HT-EBL layer

Tinedert, Imad Eddine; Saadoune, A.; Bouchama, Idris; Saeed, Muhammad

doi:10.1016/j.optmat.2020.109970

Cited by 45 publications

(20 citation statements)

References 26 publications

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“…All key parameter values are taken from the literature. [ 28,43,48,52–54 ] The parameters of CdTe photovoltaic device are tabulated in Table 2 and 3 . The simulation is conducted under AM1.5G global solar irradiance with an operating temperature of 25 °C.…”

Section: Device Structure and Simulation Parametermentioning

confidence: 99%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

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Section: Device Structure and Simulation Parametermentioning

confidence: 99%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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“…2 display the equivalent circuit for the suggested tandem cell. The equations that related to the equivalent circuit are illustrated as the following [18]:…”

Section: Tandem Structurementioning

confidence: 99%

“…Which decreases the length of the depletion region and increase the tunneling phenomena and electrons can cross the depletion region easily [18].…”

Section: Tunnel Junction (Gaas) Modelingmentioning

confidence: 99%

“…The tunnel junction thickness usually determines the path of electrons whether it has high or low resistance between the upper's BSF layer and the window layer of the lower cell [4] .the links must show a simple path between the two cells in order to have a small loss as minimum as possible. In order to achieve this low path during the tunnel junction, the impurity concentration must be increased, and the bandgap of the tunnel junction must have a large value [4] [18].The impact of the change in the tunnel junction's materials on the tandem cell is gives in Table 2. The performance of the InGaP/GaAs tunnel diode is best from the performance of the GaAs /GaAs tunnel diode because InGaP/GaAs tunnel diode has a large current (tunneling) compared to GaAs /GaAs tunnel diode.…”

Section: Change In the Tunnel Junctionmentioning

confidence: 99%

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Simulation of High Efficiency Tandem Solar Cell using InGaP/GaAs

Salim¹,

Mohammed²

2021

(AREJ)

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The dual junction (tandem) cell structure (InGaP/GaAs) is depending on Indium gallium Phosphides (InGaP) as the upper cell, Gallium Arsenide (GaAs) as the lower cell, and behaves as tunnel junction (TJ). The structure of the (InGaP/GaAs) dual junction cell was simulated in this work using SILVACO program to obtain a high solar cell efficiency. Firstly, the effect of doping concentration and thickness of window layer of the upper cell was investigated on the (InGaP/GaAs) tandem cell performance. Then the GaAs /GaAs (TJ) is replaced by an InGaP/GaAs (TJ).A comparison of performance parameters between the two types of tunnel diode (GaAs / GaAs) and (InGaP/GaAs) was studied. The parameters that have been compared are open-circuit voltage (VOC), efficiency (η), the short circuit current density (JSC), and Fill Factor (FF). Quite high operating factors for tandem cell are achieved by taking into account the crucial number of cells as well as improving layer parameters of the layers. All calculations and simulations of tandem cell are performed with the typical AM1.5 solar spectrum light intensity of 1-sun at room temperature (300 K). Lastly, the findings illustrate that the optimum properties of the suggested tandem cell are efficiency (η) = 34.37 percent, VOC = 2.449 V, JSC = 21.69 mA/cm 2 , FF=89.33 percent.

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“…CdS is also used in combo with other semiconductors to create various devices on heterotransients, for example in quantum-cascading lasers, photo receivers for solar panels [1][2][3][4][5][6]. The use of a thin CdS film in the structure of solar cells is indicated by its generation of media due to its high photosensitivity [7].…”

Section: Problem Statementmentioning

confidence: 99%

Simulation of structural and electrical parameters of СdS thin films

Chernikova

Mateik

Ogorodnik

2021

Phys. Chem. Solid St.

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Based on the calculations from the first principles, we obtained the distributions of valence electron densities and electron energy spectra for a CdS film with different oxygen concentrations. According to the results of calculations, it is established that during the adsorption of oxygen atoms on the surface of CdS, oxygen taking electrons from the surface atoms of the CdS film, increases its catalytic activity. The oxygen concentration should not exceed 12.5%.

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Numerical modelling and optimization of CdS/CdTe solar cell with incorporation of Cu2O HT-EBL layer

Cited by 45 publications

References 26 publications

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Simulation of High Efficiency Tandem Solar Cell using InGaP/GaAs

Simulation of structural and electrical parameters of СdS thin films

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