Numerical modelling of AC-characteristics of CdTe and CIS solar cells

Niemegeers, Alex; Burgelman, Marc

doi:10.1109/pvsc.1996.564274

Cited by 98 publications

(58 citation statements)

References 5 publications

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“…This numerical simulation program is written and maintained at the University of Gent. 3,4 It is designed as a general polycrystalline thin-film device simulator and is mainly used for modeling CdTe-and CIGS/CIS-based solar cells. The discussion is based on version 2Á3 for the operating system Windows.…”

Section: Scapsmentioning

confidence: 99%

Modeling thin‐film PV devices

Burgelman

Verschraegen

Degrave

et al. 2004

Progress in Photovoltaics

404

184

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Numerical modeling is increasingly used to obtain insight in to the details of the physical operation of thin-film solar cells. Over the years several modeling tools specific to thin-film PV devices have been developed. A number of these tools have reached a mature status and are available to the PV community. Some of the most commonly used programs are presented and the possibilities as well as the shortcomings are discussed. Also, for the different thin-film PV devices (CdTe, CIGS, and, to a lesser extent, amorphous silicon and nano-structured solar cells) an overview is given of modeling efforts and achievements.Three-dimensional, numerical simulation is now almost indispensable for the design of silicon devices, from discrete transistors and optoelectronic devices to large-scale integration. Highly developed programs include, e.g., tunneling, optics, heat flow and other features. Numerical simulation is routinely performed in developing

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Section: Scapsmentioning

confidence: 99%

Modeling thin‐film PV devices

Burgelman

Verschraegen

Degrave

et al. 2004

Progress in Photovoltaics

404

184

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“…These regions typically include the main junction and a region affected by a back-contact potential barrier [8]. To place the interpretation of these C-V measurements on a more solid foundation, the device-modeling program SCAPS-1D (Solar Cell Capacitance Simulator in One Dimension) has been used to simulate expected LIV/DIV/C-V behavior of simple two-layer CdS/CdTe structures [9].…”

Section: Modelingmentioning

confidence: 99%

Formation Of ZnTe: Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

Gessert

Asher

Johnston

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ~360°C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320°C. C-V analysis indicates that a ZnTe:Cu layer thickness of <~0.5 µm does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 µm) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest Voc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

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“…Since the open-circuit voltage of reasonable Cu(In,Ga)Se 2 devices (VQC ~ 0.5 V) is just at the threshold between SCR and QNR recombination, we have also conducted some numerical simulations using the software package SCAPS-1D (Niemeegers and Burgelman, 1996). The results for assumed back-surface recombination velocities 5"= 10 2 cms" 1 and 10 5 cms" 1 are also displayed in Fig.…”

Section: Recombination In the Absorbermentioning

confidence: 99%