Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method

Abstract

Crystal quality during Czochralski (Cz) growth is influenced significantly by the convexity of solid/liquid (S/L) interface, which is related to operating conditions, such as Radio‐Frequency (RF) coil position, crystal rotation and crucible rotation. Generally, a flat interface shape is preferred for high‐quality crystal growth. It is difficult to achieve the optimized conditions even from numerical modeling due to the large computational load from examining all of the affecting factors. Orthogonal design/test method, fortunately, provides an efficient way to organize the study of multiple factors with the minimization of computational load. In the paper, this method is adopted to investigate the affecting factors of Cz‐sapphire single crystal growth based on the coupled calculation of thermal field and melt flows. The orthogonal analysis clearly reveals the optimized growth conditions to achieve a relative flat S/L interface under the current ranges of the parameters.

Analysis and optimization of multiple factors influencing fracturing induced stress field

“…The sensitivity of the influence factor represents the influence degree on the ISCR. In order to analyse the combined action of multiple factors effectively, the orthogonal test design (Fang et al 2014;Yao et al 2012) method is applied. There are six influence factors, including the maximum and minimum horizontal stress ratio, Poisson's ratio, fracture net pressure, fracture height, fracture spacing and its number.…”

Terbium(iii)-based coordination polymer with millimeter-size single crystals and high selectivity and sensitivity for folic acid

“…To better cultivate a single-crystal complex with high quality and large size and favorable for X-ray single crystal diffraction, the idea of orthogonal experimental design has been widely used in the preparation of complex single crystals in recent years. 32 It is helpful to find the best conditions and parameters of single crystal growth more quickly and efficiently, so as to obtain high-quality, large-size, and defect-free complex crystals. An orthogonal experiment refers to an experimental design method that studies multi-factors and multi-levels.…”

Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

“…Numerical simulation is an effective tool to study heat transfer in crystal growth and design a thermal field subsequently, which is conductive to solving the problem mentioned above. Researchers have conducted many numerical works to build models and analyze the heat transfer in CZ growth, leading to the optimization of design of the thermal field, such as the optimizations of the crucible position [22], heat shield design [23,24], radio frequency (RF) coils' position [25,26], furnace enclosure shape [27], and so on. Tang et al [28] mainly simulated the flow field of a Ga 2 O 3 melt and analyzed the difficulties of growing large-size bulk β-Ga 2 O 3 single crystals via CZ growth.…”