Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Hashempour, Zahra; Asgari, Asghar; Nikipar, S.; Abolhasani, M.; Kalafi, M.

doi:10.1016/j.physe.2009.04.026

Cited by 11 publications

(4 citation statements)

References 19 publications

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“…On the other hand, from the charge transport model, the channel potential is well known for AlGaN/GaN heterostructure FETs. Hence the electron temperature can be derived from the energy balance model as [22] 2 02…”

Section: Methodsmentioning

confidence: 99%

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Yahyazadeh

Hashempour

2019

JST

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A numerical model for the source-drain channel resistance based high electron mobility transistors has been developed that is capable to predict accurately the effects of polarization Coulomb Field Scattering (PCF), multi sub-band on source-drain channel resistance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition, to develop the model, accurate two-dimensional electron gas mobility and modified wave function in barrier AlGaN have been used. According to the numerical calculations, the effect of multi sub-band and PCF scattering on the increase of source-drain channel resistance is 35% and 65%, respectively, with the effect of PCF being almost twice as high as multi sub-band. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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Section: Methodsmentioning

confidence: 99%

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Yahyazadeh

Hashempour

2019

JST

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“…The traps within the AlGaN barrier can be assumed as the barrier capacitance, C AlGaN , which is related to the depletion distance of d 1 and d 2 (6).To calculate the total drain current, both 2DEG channel and AlGaN barrier currents have been calculated. The expression of device current can be obtained as ( [6,7) ( ) Where d 2 , the depletion layer thickness has been used [6]. To calculate the exact electrical properties in HEMTs, one need to include the electron traps effects such as interface and surface traps, and GaN barrier traps in the calculation.…”

Section: Model Descriptionmentioning

confidence: 99%

Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

2014

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An analytical-numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of temperature on the cut off frequency for different gate source and drain source biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a selfconsistent solution of the Schrödinger and Poisson equations. In addition, current in the barrier of AlGaN and traps density in AlGaN are taken in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs devices.

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“…The traps within the AlGaN barrier can be assumed as the barrier capacitance, C AlGaN , which is related to the depletion distance of d 1 and d 2 [6].To calculate the total drain current, both the 2DEG channel and AlGaN barrier currents have been calculated. The expression of for the device current can be obtained as [6,7] ( ) Where d 2 is the depletion layer thickness which has been used in [6,7]. is the density of the electron real space transfer from the 2D (2DEG channel) to the 3D state (in AlGaN barrier).It should be mentioned that even at room temperature, the mobility of the 3D-electron gas is around about 50% smaller than the mobility of 2D-electrons.…”

Section: Model Descriptionmentioning

confidence: 99%

Effect of AlGaN Barrier Thickness on the Transconductance of AlGaN/GaN High Electron Mobility Transistors

Yahyazadeh¹

2014

ECS Trans.

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An analytical- numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of AlGaN barrier thickness on the transconductance in different gate source and drain source biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition current in the barrier of AlGaN, traps density in AlGaN are also take in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs device.

show abstract

Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Cited by 11 publications

References 19 publications

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

Effect of AlGaN Barrier Thickness on the Transconductance of AlGaN/GaN High Electron Mobility Transistors

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