Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004.
DOI: 10.1109/icsd.2004.1350493
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Numerical resolution of charge transport in cross-linked polyethylene by means of a bipolar model with a distribution of traps

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Cited by 9 publications
(10 citation statements)
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“…This favors local large current densities that may cause the formation and growth of local conductive paths, leading to breakdown once they reach a critical length [25][26][27][28][29]. In practical insulating systems, these phenomena are generally localized at interfaces between the bulk insulation and defects (such as protrusions and metallic inclusions), which are able to magnify the local electric field significantly with respect to the average design field, or associated with field amplification due to huge bipolar space charge accumulation, that can happen in the presence of strongly injecting electrodes and ionic contaminants [30][31][32].…”
Section: Field Limited Space Charge Modelmentioning
confidence: 99%
“…This favors local large current densities that may cause the formation and growth of local conductive paths, leading to breakdown once they reach a critical length [25][26][27][28][29]. In practical insulating systems, these phenomena are generally localized at interfaces between the bulk insulation and defects (such as protrusions and metallic inclusions), which are able to magnify the local electric field significantly with respect to the average design field, or associated with field amplification due to huge bipolar space charge accumulation, that can happen in the presence of strongly injecting electrodes and ionic contaminants [30][31][32].…”
Section: Field Limited Space Charge Modelmentioning
confidence: 99%
“…The complete sensitivity analysis of each parameter has already been published elsewhere [30]. We recall here only the impact of the upper filled level at the interface  f0 , and, as the spatial grid is specific, we also present the influence of the number of discretization points on the simulations results.…”
Section: Parameters Sensitivity Analysismentioning
confidence: 99%
“…When T Ӷ T 0 , only a fraction n f of the total carrier density n is involved in transport: this corresponds effectively to carriers trapped at an energy within k B T in respect to ⌬ f , 13,21,22 …”
Section: ͑13͒mentioning
confidence: 99%
“…13 This means that an upper filled level, ⌬ f ͑x , t͒, can be defined, which is time and space dependent. The relation between carrier density, for one specie, and ⌬ f is of the form…”
Section: Transport and Trappingmentioning
confidence: 99%
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