Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Abstract

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study

“…However, it provides higher efficiency potential than the Al-BSF device [13][14][15]; contact recombination loss in passivated PERC devices near the metal/silicon interface still exists. When metal is placed directly near the silicon interface, it generates a higher surface recombination velocity (SRV) (∼10 6 cm s −1 ), leading to ∼50% contact recombination losses [16][17][18]. Thus, contact recombination losses have emerged as a limiting factor in PERC devices.…”

Design and parametric optimization of ion-implanted PERC solar cells to achieve 22.8% efficiency: a process and device simulation study

“…Comparison of PV parameters of simulated PERC devices with theoretical PERC performances[31][32][33][34]54,74,75 …”