Numerical simulation and analysis of process parameters of GaN-MOCVD reactor

Li, Jian; Wang, Jie; Cai, Jiandong; Xu, Yifeng; Fan, Bingfeng; Wang, Gang

doi:10.1016/j.icheatmasstransfer.2017.11.011

Cited by 15 publications

(7 citation statements)

References 37 publications

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“…The reactor design optimization and flow field simulation based on a 3D MOCVD reactor are gaining attention. [17][18][19] Currently, major commercial MOCVD reactors are provided by Veeco Instruments Inc (USA) and Aixtron (Germany). In the circular wafers for light-emitting diode (LED) industry, MOCVD uses small-size rotating carrier to improve the uniformity of gas flow and temperature, which is primarily applicable to GaN deposition.…”

Section: Introductionmentioning

confidence: 99%

Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

Yu,

Shen,

et al. 2023

Cryst. Res. Technol.

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In the flexible photovoltaic (PV) industry, increment of the metal‐organic chemical vapor deposition (MOCVD) deposition zone is crucial to reducing the cost of ownership and increasing the power conversion efficiency (PCE). This implies that the larger closed coupled showerhead (CCS) of MOCVD system should be used in the manufacture of flexible gallium arsenide (GaAs) PV thin‐film solar cells. Currently, Aixtron Crius II is the largest commercial CCS reactor for GaAs deposition with 55 × 2 inches circular wafers. As the size of the carrier and showerhead increases, the deposition uniformity and gas flow stability become more difficult to control. To address these issues, previous studies have investigated the effects of geometric and process parameters of MOCVD on the vertical process gas inlet, with either a rotating carrier model represented by Veeco using high‐speed rotating carrier (Turbo Disc), and Aixtron using low‐speed rotating planetary carrier, or a horizontal process gas injector with a rotating carrier. However, these efforts have limited further capacity scale‐up. In this study, numerical simulations and fluid visualization experiments are conducted, based on previous research on thermal uniformity, for design optimization of a gas distribution system in a large square GaAs‐MOCVD reactor. The achieved reactor capacity is 36 × 4 inches square wafers in one process cycle, and the optimal average deposition rate and deposition uniformity of GaAs film are ≈0.430 µm min−1 and 0.93%, respectively.

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Section: Introductionmentioning

confidence: 99%

Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

Yu,

Shen,

et al. 2023

Cryst. Res. Technol.

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“…Particularly, the flow and heat field simulation in a 3D MOCVD reactor has been receiving increasing attention. [ 11–13 ] Moreover, the uniformity of the temperature and gas flow, and particulate pollution in reactors should be assessed. Currently, major MOCVD reactors are supplied by Veeco Instruments Inc. and AIXTRON.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

2022

Crystal Research and Technology

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Currently, limited studies on 3D models based on thermal and flow fields have investigated the effects of geometric and process parameters on the metal-organic chemical vapor deposition (MOCVD) process in large square reactors under severe temperatures. To address these problems, this study conducts numerical simulations and experiments for a large square Gallium Arsenide (GaAs) MOCVD reactor. A 3D model based on the MOCVD reactor coupled with fluid flow and heat transfer is developed to analyze the influence of the heating mode and process parameters on the temperature uniformity and heating efficiency. At 800 °C, the heating time is decreased less than 300 s, and a temperature uniformity of 7.9 °C is achieved, thereby realizing improved uniformity and excellent reactor performance. The use of cross and lateral lamps promote the controllability of the reactor temperature. As the gas flow rate increases, the velocity at the edge of the reactor increases, which induces the difference in the heat transfer coefficient between the center and edge increased. The variations in the gas composition influence the heating rate and temperature uniformity. The results of this study are useful for the design of heating modules in MOCVD reactors.

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“…Subsequent studies focused on specific apparatus constructions from small laboratory size solutions, suitable for processing 3 in wafers [17,[20][21][22][23][24][25] up to big, rotating disk or planetary constructions designed for more than 40 2-in substrates [15,[26][27][28][29][30]. The researchers investigated the geometry and shape of reactor chambers [15,25,27] with special emphasis placed on the distance between the inlet and the susceptor, the gas injection systems [22,26,31,32] responsible for proper chemical species delivery, as well as the operating parameters of the growth process [15,16,29,33].…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

et al. 2021

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The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place during the GaN (gallium nitride) growth process using trimethylgallium and ammonia at a pressure of above 2 bar. High pressure accelerates the growth process, but it results in poor thickness and quality in the obtained layers; hence, understanding the factors influencing non-uniformity is crucial. The present investigations have been conducted with the aid of ANSYS Fluent finite volume method commercial software. The obtained results confirm the possibility of increasing the growth rate by more than six times through increasing the pressure from 0.5 bar to 2.5 bar. The analysis shows which zones vortexes form in. Special attention should be paid to the transitional flow within the growth zone as well as the viewport. Furthermore, the normal reactor design cannot be used under the considered conditions, even for the lower pressure value of 0.5 bar, due to high turbulences.

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Numerical simulation and analysis of process parameters of GaN-MOCVD reactor

Cited by 15 publications

References 37 publications

Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

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