Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics

Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

“…Based on the intensively investigated electronic defects in AOSs [3,18,19], especially for IGZO structures, other AOS TFTs, such as a-SnOx, a-ITZO, etc., have also been numerically analyzed by characterizing the DOS [16,17]. Therefore, in this study, the adopted physical models and materials properties of a-IWO TFT were fundamentally inherited from a-IGZO publications and then corrected to some extent by materials measurements and TCAD calibration or assumptions [10][11][12][13][14][15][16][17] from measured transfer characteristics. The physical models contain Maxwell-Boltzmann statistics, the drift-diffusion (DD) model, Poisson's equation, and carrier continuity equations with Shockley-Read-Hall (SRH) recombination.…”

“…One of the most important features in amorphous semiconductors is electronic defects, and therefore the defects in either a-IGZO [3,[10][11][12][13][14][15] or other AOSs such as amorphous indium tin zinc oxide (a-ITZO) [16] and amorphous tin oxide (a-SnO x ) [17], etc., have been intensively investigated by theoretical DFT calculations [18][19][20] and experiments. However widely varying process conditions of AOS mainly affect the density of states (DOS) at specific energy levels, corresponding with variations of different chemical species.…”

“…However widely varying process conditions of AOS mainly affect the density of states (DOS) at specific energy levels, corresponding with variations of different chemical species. Additional numerical analysis by Technology Computer Aided Design (TCAD) can be used to understand the physics and material properties in AOS TFTs by studying the effect of the bulk sub-gap density of states (DOS) on electrical characteristics [10][11][12][13][14][15][16][17]. Furthermore, for developing and exploring vast AOS materials, theoretical DFT calculations would be time-exhausting, and utilizing TCAD numerical analysis together with simple material analysis could an alternative and prompt solution to AOS devices.…”

Switching Characteristics of a-ITZO Based Thin Film Transistor

“…Zno, IGZO, SnO2, and GaZnO are suitable oxide materials for a thin-film transistor. Several researchers have extensively studied IGZO-based TFT because to its superior electrical properties, but IGZO materials have disadvantages such as element scarcity and indium toxicity [3]. ITZO is a viable alternative to IGZO because to its mobility and excellent stability [2].…”