Numerical simulation and optimization of n-Al-ZnO/n-CdS/p-CZTSe/p-NiO (HTL)/Mo solar cell system using SCAPS-1D

Abdelkadir, Abdelaziz Ait; Oublal, Essaadia; Sahal, Mustapha; Gibaud, Alain

doi:10.1016/j.rio.2022.100257

Cited by 55 publications

(29 citation statements)

References 30 publications

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“…2, is less than 5%). The smallest difference can be attributed to the luck controlling the absorber thickness, bandgap, material defects, grain size, and interfaces defects [47].…”

Section: Validation Of Experimental Resultsmentioning

confidence: 99%

“…In practice, solar cells are subject to varying weather conditions. Several studies of the operating temperature impact exist in the literature [47,[63][64][65]. Thus, we will study the impact of varying the operating temperature in the range 290-470 K, on the three solar cell configurations (FTO/CdS/Sb 2 Se 3 /Au cell or cell with a single buffer layer, FTO/(SnO 2 / CdS)/Sb 2 Se 3 /Au cell or cell with a hybrid buffer layer, and FTO/(SnO 2 /CdZnS)/Sb 2 Se 3 /MoSe 2 /Mo cell or optimized cell) presented in this work.…”

Section: Effect Of the Operating Temperaturementioning

confidence: 99%

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Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Ngoupo

Ndjaka

2022

Discov Mechanical Engineering

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In this work, we first compared the experimental and simulated J-V characteristics of the Sb2Se3-based solar cell without and with a hybrid buffer layer using SCAPS-1D software. The introduction of a second buffer layer reduces the current leakage caused at the front contact of the solar cell and the power conversion efficiency (PCE) increases from 3.75% to 5.18%; and the use of the ternary compound cadmium zinc sulfide (CdZnS), as an alternative electron transport layer (ETL) to the traditional cadmium sulfide (CdS), increases the PCE from 5.18% to 7.13%. Thereafter, different thicknesses of the SnO2/CdZnS hybrid buffer layer were simulated, and the optimization resulted in a value of 50 nm, with thicknesses of 10 nm and 40 nm for the SnO2 and CdZnS layers respectively. Furthermore, the optimization of the Sb2Se3 absorber allows to obtain a bulk defect density of 1011 cm−3 and a carrier capture cross section of 10–14 cm2. Finally, the low doping problem of the absorber is solved by forming a MoSe2 layer at the Sb2Se3/Mo interface. MoSe2 acts as a hole transport material (HTM) and is used for high mobility of charge carriers within it; moreover, its presence improves the performance of the Sb2Se3-based solar cell and a PCE of 18.77% (JSC = 34.37 mA/cm2, VOC = 660 mV, FF = 82.78%) is obtained. Our simulation results also show that the n-i-p configuration of the Sb2Se3-based solar cell is more stable.

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“…2, is less than 5%). The smallest difference can be attributed to the luck controlling the absorber thickness, bandgap, material defects, grain size, and interfaces defects [47].…”

Section: Validation Of Experimental Resultsmentioning

confidence: 99%

Section: Effect Of the Operating Temperaturementioning

confidence: 99%

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Ngoupo

Ndjaka

2022

Discov Mechanical Engineering

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“…From the different combinations of the layers, a total of 24 different structures have been modeled in this work. The design ZnO [13] IGZO [12] CdZnS [12] ZnSe [20] CBTS [12] CFTS [12] CMTS [12] CNTS [16] CZTS [13] CZTSe [17] Thickness μm 0. parameters for the materials have been collected from multiple experimental and theoretical studies and are presented in Table 1. [12] The work function for gold (Au) is set to 5.1 eV and for FTO 4.4 eV.…”

Section: Device Modelingmentioning

confidence: 99%

“…The energy band alignment significantly influences the transportation of the charge carriers and functionality of the PV cell. [17,18] Figure 5 shows the band alignment between the ETL and the absorber layer while Figure 6 shows the band alignment between the HTL and the absorber layer.…”

Section: Energy Band Alignmentmentioning

confidence: 99%

Exploring the Effect of Kesterites and Zinc‐Based Charge Transport Materials on the Device Performance and Optoelectronic Properties of FAPbI₃Perovskite Solar Cells

et al. 2023

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“…The materials and interface parameters based on the literature that was employed for this simulation study are displayed in Tables 1 and 2, respectively. [19][20][21][22][23][24][25] The following parameters were maintained throughout all simulations: AM1.5 G light spectrum, illumination of 1000 W m −2 , and at operating temperature; 300 K. The thermal velocities of holes and electrons are taken as 10 7 cm s −1 .…”

Section: Scaps-1d Simulation Parametersmentioning

confidence: 99%

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Kumari,

Mamta,

Chaudhary

et al. 2023

Advcd Theory and Sims

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Sb2Se3, a promising thin‐film photovoltaic (TFPV) absorber material known for its non‐toxic nature, abundance on Earth, and stability has the inherent limitations of low doping density of 1013 cm−3 and poor carrier mobility of 1.5 cm2 V−1 s−1, leading to a low built‐in potential and inefficient carrier collection. To address these challenges and enhance the built‐in potential and carrier collection, an effective hole‐transport layer (HTL), e.g. CdS, which contains toxic components is used. A less‐toxic alternative is explored: ZnSe as the electron‐transport layer (ETL) to mitigate this issue. In this study, the performance is evaluated of Sb2Se3/ZnSe solar cells using six different HTLs (CuSCN, MoSe2, NiO, Spiro‐OMeTAD, SnS, MoOx) through the utilization of the SCAPS‐1D modeling tool. The HTL plays a critical role in improving the effectiveness of the built‐in potential, enhancing carrier collection, and suppressing back surface recombination. The analysis involves varying the thickness and doping concentration of the absorber, buffer, and HTLs, and exploring the impact of temperature, series and shunt resistance, and the metal work function of the back contact. Among the tested devices, the one with NiO as the HTL demonstrates the highest efficiency, exhibiting a VOC (open‐circuit voltage) of 0.81 V and a PCE (power conversion efficiency) of 24.07%.

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Numerical simulation and optimization of n-Al-ZnO/n-CdS/p-CZTSe/p-NiO (HTL)/Mo solar cell system using SCAPS-1D

Cited by 55 publications

References 30 publications

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Exploring the Effect of Kesterites and Zinc‐Based Charge Transport Materials on the Device Performance and Optoelectronic Properties of FAPbI₃Perovskite Solar Cells

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

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Numerical simulation and optimization of n-Al-ZnO/n-CdS/p-CZTSe/p-NiO (HTL)/Mo solar cell system using SCAPS-1D

Cited by 55 publications

References 30 publications

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Exploring the Effect of Kesterites and Zinc‐Based Charge Transport Materials on the Device Performance and Optoelectronic Properties of FAPbI3Perovskite Solar Cells

Performance Analysis of CdS‐Free, Sb2Se3/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Contact Info

Product

Resources

About

Exploring the Effect of Kesterites and Zinc‐Based Charge Transport Materials on the Device Performance and Optoelectronic Properties of FAPbI₃Perovskite Solar Cells

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts