2021
DOI: 10.1016/j.solener.2021.08.084
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Numerical simulation of a new heterostructure CIGS/GaSe solar cell system using SCAPS-1D software

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Cited by 89 publications
(33 citation statements)
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“…For the absorber thickness less than 1.5 µm and carrier concentration above 10 18 cm −3 , the J sc raise with CuO thickness growing could be ascribed to the CuO charge collection length and hence the collection of electron hole pairs in the junction will be improved 43 . This indicates that the charge carriers will be split up and stored clearly with thickness increasing.…”
Section: Resultsmentioning
confidence: 99%
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“…For the absorber thickness less than 1.5 µm and carrier concentration above 10 18 cm −3 , the J sc raise with CuO thickness growing could be ascribed to the CuO charge collection length and hence the collection of electron hole pairs in the junction will be improved 43 . This indicates that the charge carriers will be split up and stored clearly with thickness increasing.…”
Section: Resultsmentioning
confidence: 99%
“…( 3 ) 37 . On the other hand the V oc value increase with thickness increasing and therefore improvement of the charge collection length and consequently increasing of electron hole pairs generation through the junction 43 . Moreover, the alignment of bandgaps plays important role to improve the V oc value where with small band gap for ZrS 2 than 1.45 eV more confinement take place and therefore the intra-band tunneling for carriers at the interface voltage barrier increases and more current generated 46 .…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, electron–hole continuity equations of the semiconductor are [ 15 ] d J normaln d x = G R d J normalP d x = G R where J normaln and J normalp are the electron current density and hole current density; R and G are recombination and generation rates, respectively.…”
Section: Simulation Methodologymentioning
confidence: 99%
“…where p and n are the carrier densities, ψ is the electrostatic potential, e is the electric charge, ε 0 and ε r are the air permittivity and relative permittivity, N D and N A are the donor and acceptor concentration, and ρ n and ρ p are the distribution of holes and electrons, respectively. Furthermore, electron-hole continuity equations of the semiconductor are [15] dJ n…”
Section: Growth Of Culnse 2 Film With Direct Inkjet Printingmentioning
confidence: 99%
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