Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

Vonsovici, A.; Orobtchouk, Régis; Köster, Alain

doi:10.1109/50.641532

Cited by 8 publications

(1 citation statement)

References 26 publications

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“…In this paper, we implement a tunable filter by making an etched cavity InGaAsPBnP waveguide to form a Fabry-Perot filter that can be tuned at high speed by electrical current injection. Our device is similar to the recently proposed silicon-on-insulator waveguide interferometer [7]. Basic device designs and experimental results of the FP filter will be presented.…”

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High tuning speed etched cavity InGaAsP/InP waveguide Fabry-Perot filter

Mak

Tsang

Soole

1999

1999 Digest of the LEOS Summer Topical Meetings: Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/Rf Pho

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Tunable optical filters are needed for Wavelength Division Multiplexing O M ) optical communication systems. Many approaches have been investigated for tunable filters operating at 1.3 pm and 1.5 pm wavelength, including fiber Fabry-Perot (FP) filters [ 11, electromechanically tuned micromachined semiconductor FP filters [2], Bragg grating filters [3], acousto-optic filters 141 and arrayed waveguide grating devices integrated with phase shifters [5]. The waveguide FP filter can be rapidly tuned (-ns) by free-carrier injection to modulate the refractive index of the waveguide and is potentially suitable for WDMA systems which require a short channel access time [6]. In this paper, we implement a tunable filter by making an etched cavity InGaAsPBnP waveguide to form a Fabry-Perot filter that can be tuned at high speed by electrical current injection. Our device is similar to the recently proposed silicon-on-insulator waveguide interferometer [7]. Basic device designs and experimental results of the FP filter will be presented.Figla is the waveguide structure for the FP filter. The waveguide is designed to be single-moded for TE and TM light at 1.55 pm wavelength. The InGaAsP and InP layers were grown by low pressure organometallic chemical vapour deposition on an n+ InP substrate. The bandgap composition of InGaAsP was selected to be sufficiently far to ensure low absorption loss at 1.55 pm wavelength but yet close enough to allow sufficient optical phase change under electrical current injection for wavelength tuning. The injected current was confined to the rib region by etching to the intrinsic layer to form a pair of isolation trenches at a distance of about 15 pm from center of the rib. Fig.lb is the side view of the waveguide FP filter. The waveguide FP resonant cavity was realised by two mirror trenches formed by chemically-assisted ion-beam etching (CAIBE). To achieve high contrast, high reflectivity dielectric coatings were deposited on the FP cavity facets. Anti-reflection coatings were deposited on the inputloutput waveguide facets to prevent multimirror Fabry-Perot interferometers effect [8] that will degrade filter performance. Fig2 is the scanning electron microscope (SEM) image of a mirror trench. Ohmic metal contacts were formed on the bottom of the substrate and the top of the waveguide rid to allow wavelength tuning by current injection.The prototype devices were cleaved to a total length of about 1 mm (including input and output waveguides) and the substrate of the device was attached to a copper heatsink by silver loaded epoxy. Electrical contact Output wavegulda + ~ 3um -t Input Waveguide Claddlng InP P n E 3.17 oiif InGaAsP (1.3 urn) n E 3.423 Guldlng Layer InGePsP (1.4 urn) n = 3.502 0.05 InGaAsP (1.3 urn) n = 3.423 P mlmr trenches n = 3.17 0.5 (4 Substrate InP Fig. 1 Structure of waveguide FP filter: (a) cross-sectional view of the single-mode rid waveguide, (b) side view of the FP cavity formed by two mirror trenches made by CAIBE

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confidence: 95%

High tuning speed etched cavity InGaAsP/InP waveguide Fabry-Perot filter

Mak

Tsang

Soole

1999

1999 Digest of the LEOS Summer Topical Meetings: Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/Rf Pho

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Modeling planar leaky optical waveguides

Pogossian

2003

Journal of Applied Physics

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A simple theoretical model is proposed for a description of light propagation in ion-implanted leaky waveguides. It permits interpretation of existing published experimental results. A single parameter, the imaginary component of the refractive index, is sufficient to describe losses in the barrier. Simple analytical expressions are obtained for both the lateral resonance condition and the confinement coefficient. For each quasiguided mode, we calculate an optimal barrier thickness which gives the lowest attenuation coefficient. Interestingly, for thick barriers, high-order modes give the best confinement coefficient. Our approach can also describe prism-loaded slab type waveguides.

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Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm

Vonsovici

Vescan

1998

IEEE J. Select. Topics Quantum Electron.

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Numerical simulation of a silicon-on-insulator waveguide Fabry-Perot interferometer for intensity light modulators at 1.3 μm

Cited by 8 publications

References 26 publications

High tuning speed etched cavity InGaAsP/InP waveguide Fabry-Perot filter

High tuning speed etched cavity InGaAsP/InP waveguide Fabry-Perot filter

Modeling planar leaky optical waveguides

Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm

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