Numerical simulation of Gunn oscillation in AlGaAs/InGaAs high-electron mobility transistor

Hong, Sungmin; Jang, Jae‐Hyung

doi:10.1109/ulis.2016.7440100

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2018

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The part of the electromagnetic spectrum which lies between microwaves and infrared light is sometimes referred to as the THz gap due to the lack of high power sources and sensitive devices to emit and detect THz waves [1]. A promising approach to generate THz radiation is based on plasma waves in semiconductor devices [2][3][4][5]. One of the possible mechanisms was suggested by Dyakonov and Shur, who noticed that a steady current in a submicron gate-length field effect transistor (FET) with asymmetric boundary conditions can become unstable and generate plasma waves [6,7].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Dyakonov–Shur instability for THz wave generation based on the Boltzmann transport equation

Kargar

Linn

Jungemann

2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We compute the growth rate of the Dyakonov-Shur plasma instability of a quasi-2D electron gas by numerical simulations based on the Boltzmann transport equation. We present a method to solve the characteristic equation by a Newton approach to find the two Vlasov modes. A deterministic solver using Fourier harmonics in the 2D k-space is applied to carrier transport in the framework of the Dyakonov-Shur model. We investigate the suppression of the plasma growth rate due to the Pauli principle and temperature.

show abstract