2023
DOI: 10.1149/2162-8777/ad161f
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Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Shivani Yadav,
Sonam Rewari

Abstract: The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Haf… Show more

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Cited by 8 publications
(2 citation statements)
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“…[18][19][20] Trench gate structure provides excellent improvement in biosensing. [21][22][23][24] The biosensor designs introduced recently, including GC-CPTFET 25 and Lg-TGNFET, 26 are aligned in their objective to progress label-free biomolecule detection. Each design incorporates distinct features, such as a graphene channel and tri-layer graphene nanoribbon, contributing collaboratively to the ongoing development of biosensing technologies.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…[18][19][20] Trench gate structure provides excellent improvement in biosensing. [21][22][23][24] The biosensor designs introduced recently, including GC-CPTFET 25 and Lg-TGNFET, 26 are aligned in their objective to progress label-free biomolecule detection. Each design incorporates distinct features, such as a graphene channel and tri-layer graphene nanoribbon, contributing collaboratively to the ongoing development of biosensing technologies.…”
mentioning
confidence: 99%
“…37,38 Numerous works in the literature have showcased the advantages of GaN as the channel material and the graded channel architecture. 23,24 This paper proposes a gate all around engineered gallium nitride FET (GAAE-GANFET) based biosensor. The novelty of this work lies in its utilization of both gate all around engineering and channel engineering techniques.…”
mentioning
confidence: 99%