Numerical Simulation of High Al Component AlGaN Films Grown by MOCVD

Lu, Ligen; Ren, Wanghao; Feng, Li; Li, Zhiming; Ren, Guoqiang; Li, Yang

doi:10.1109/cisce.2019.00161

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Experiments and Mechanism Research Of Algan Growth1

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2020

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“…In conclusion, when AlGaN was grown by MOCVD, the growth rate decreased and the Al component increased in the layer with the temperature rise. 37 Moreover, Keller et al also found that the surface morphology of the layer deteriorated with the increase of the Al component. 38 Therefore, the effect of temperature on the Al component also indirectly affected the quality of the layer.…”

Section: Experiments and Mechanism Research Of Algan Growthmentioning

confidence: 99%

Review—Review of Research on AlGaN MOCVD Growth

Tang

Zhang

et al. 2020

ECS J. Solid State Sci. Technol.

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Due to the broad application prospects of optoelectronic devices and microwave devices at high temperature and power, the process of Metal Organic Chemical Vapor Deposition (MOCVD) of AlGaN of the key material AlGaN has been extensively researched in the past 30 years. In order to enhance the quality of AlGaN layers, researchers continuously analyzed their growth mechanism and optimized the growth process through experimental and theoretical studies. In this work, based on reviewing previous studies, we summarize the research progress for AlGaN grown by MOCVD and discuss the existing problems and future research priorities.

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Section: Experiments and Mechanism Research Of Algan Growthmentioning

confidence: 99%