Numerical simulation of lead-free MASnI3 perovskite/silicon heterojunction for solar cells and photodetectors

Yadav, Chandan; Kumar, Sushil

doi:10.1016/j.rsurfi.2024.100301

Results in Surfaces and Interfaces

2024

DOI: 10.1016/j.rsurfi.2024.100301

|View full text |Cite

Numerical simulation of lead-free MASnI3 perovskite/silicon heterojunction for solar cells and photodetectors

Chandan Yadav,

Sushil Kumar

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study

Adjouz,

Allam,

Souli

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Perovskite CsSnI₃ is a highly promising material in optoelectronics, particularly for solar cells. This research focuses on enhancing the efficiency of CsSnI₃-based solar cells by investigating the effects of key parameters such as absorber layer thickness, defect density, and parasitic resistances on their performance. Utilizing the SCAPS-1D software, a solar cell with a layered architecture consisting of SPIRO/CsSnI₃/CH₃NH₃SnI₃/PCBM/ITO was simulated, where SPIRO functions as the hole transport layer, CsSnI₃ as the absorber layer, CH₃NH₃SnI₃ as the intermediate layer, and PCBM as the electron transport layer. Simulation results identified an optimal CsSnI₃ absorber thickness of 300 nm, yielding a maximum power conversion efficiency of 18.67%, with high values for open-circuit voltage (Voc = 0.85 V), short-circuit current density (Jsc = 31.092 mA/cm²), and fill factor (FF = 71.02%). However, the study also highlighted the adverse impact of parasitic resistances on cell efficiency, with the efficiency decreasing to 13.32% when realistic series resistance values were considered, underscoring the importance of minimizing these resistances to improve the stability of the device.Additionally, a notable efficiency of 19.47% was achieved when the shunt resistance was set at Rshunt = 108Ω⋅cm².

show abstract

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study

Adjouz,

Allam,

Souli

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Numerical simulation of lead-free MASnI3 perovskite/silicon heterojunction for solar cells and photodetectors

Cited by 1 publication

References 35 publications

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study

Contact Info

Product

Resources

About

Numerical simulation of lead-free MASnI3 perovskite/silicon heterojunction for solar cells and photodetectors

Cited by 1 publication

References 35 publications

Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study

Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study

Contact Info

Product

Resources

About

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study

Simulation and modeling of a new CsSnI₃ solar cell structure: a numerical study